Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박진성 | - |
dc.date.accessioned | 2018-03-17T05:00:34Z | - |
dc.date.available | 2018-03-17T05:00:34Z | - |
dc.date.issued | 2014-09 | - |
dc.identifier.citation | ACS APPLIED MATERIALS & INTERFACES, 2014, 6(20), p.7481-17488 | en_US |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.uri | https://pubs.acs.org/doi/10.1021/am502085c | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/48301 | - |
dc.description.abstract | Highly conductive indium oxide films, electrically more conductive than commercial sputtered indium tin oxide films films, were deposited using a new liquid precursor Et2InN(SiMe3)(2) and H2O by atomic layer deposition (ALD) at 225-250 degrees C. Film resistivity can be as low as 2.3 x 10(-4)-5.16 x 10(-5) Omega.cm (when deposited at 225-250 degrees C). Optical transparency of >80% at wavelengths of 400-700 nm was obtained for all the deposited films. A self-limiting ALD growth mode was found 0.7 angstrom/cycle at 175-250 degrees C. X-ray photoelectron spectroscopy depth profile analysis showed pure indium oxide thin film without carbon or any other impurity. The physical and chemical properties were systematically analyzed by transmission electron microscopy, electron energy loss spectroscopy, X-ray diffraction, optical spectrometer, and hall measurement; it was found that the enhanced electrical conductivity is attributed to the oxygen deficient InOx phases. | en_US |
dc.description.sponsorship | This research was supported by UP Chemical and Korea Sanhak Foundation in 2012 and partially supported by the Global Frontier R&D Program through the Global Frontier Hybrid Interface Materials (GFHIM) of the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT & Future Planning (2013M3A6B1078870 and 2013M3A6B1078872). | en_US |
dc.language.iso | en | en_US |
dc.publisher | AMER CHEMICAL SOC, 1155 16TH ST, NW, WASHINGTON, DC 20036 USA | en_US |
dc.subject | indium oxide | en_US |
dc.subject | atomic layer deposition | en_US |
dc.subject | transparent conducting oxide | en_US |
dc.subject | resistivity | en_US |
dc.title | Highly Conducting, Transparent, and Flexible Indium Oxide Thin Film Prepared by Atomic Layer Deposition Using a New Liquid Precursor Et2InN(SiMe3)(2) | en_US |
dc.type | Article | en_US |
dc.relation.volume | 6 | - |
dc.identifier.doi | 10.1021/am502085c | - |
dc.relation.page | 17481-17488 | - |
dc.relation.journal | ACS APPLIED MATERIALS & INTERFACES | - |
dc.contributor.googleauthor | Maeng, Wan Joo | - |
dc.contributor.googleauthor | Choi, Dong-won | - |
dc.contributor.googleauthor | Chung, Kwun-Bum | - |
dc.contributor.googleauthor | Koh, Wonyong | - |
dc.contributor.googleauthor | Kim, Gi-Yeop | - |
dc.contributor.googleauthor | Choi, Si-Young | - |
dc.contributor.googleauthor | Park, Jin-Seong | - |
dc.relation.code | 2014023980 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | jsparklime | - |
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