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Effect of MeV Nitrogen Ion Implantation on the Resistivity Transition in Czochralski Silicon Wafers

Title
Effect of MeV Nitrogen Ion Implantation on the Resistivity Transition in Czochralski Silicon Wafers
Author
박재근
Keywords
Silicon; Ion implantation; Gettering; Nitrogen
Issue Date
2012-12
Publisher
한국물리학회
Citation
THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2012, 61(12), P.1981-1985, 5P.
Abstract
We investigated how MeV nitrogen ion implantation affects the resistivity transition in Czochralski (CZ) silicon wafers. After annealing at 800 degrees C for 20 h and again at 1000 degrees C for 10 h, the implanted nitrogen atoms accumulated in the projected range (R-P) for ion doses less than 5 x 10(14) cm(-2) whereas they accumulated at both R-P/2 and R-P at ion doses above 3 x 10(15) cm(-2). These results indicate that no resistivity transition was found at nitrogen ion doses less than 5 x 10(13) cm(-2) whereas n(-)/p or n(+)/p resistivity transition was shown at ion doses higher than 5 x 10(14) cm(-2). Many fewer than 1% of the implanted nitrogen atoms were ionized after the heat treatment. Thus, the resistivity of nitrogen-doped silicon wafers is more than 100 times higher than that of phosphorous-doped silicon wafers.
URI
https://link.springer.com/article/10.3938/jkps.61.1981http://hdl.handle.net/20.500.11754/48207
ISSN
0374-4884
DOI
10.3938/jkps.61.1981
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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