Enhancement of the electrical characteristics of thin-film transistors with indium-zinc-tin oxide/Ag/indium-zinc-tin oxide multilayer electrodes
- Title
- Enhancement of the electrical characteristics of thin-film transistors with indium-zinc-tin oxide/Ag/indium-zinc-tin oxide multilayer electrodes
- Other Titles
- Ag
- Author
- 김태환
- Keywords
- ROOM-TEMPERATURE; TRANSPARENT; FABRICATION; DIODE
- Issue Date
- 2014-08
- Publisher
- IOP PUBLISHING LTD
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS, 2014, 53(8), 086502
- Abstract
- Transparent indium-zinc-tin oxide (IZTO)-based thin-film transistors (TFTs) with IZTO/Ag/IZTO multilayer electrodes were fabricated on glass substrates using a tilted dual-target radio-frequency magnetron sputtering system. The IZTO TFTs with IZTO/Ag/IZTO multilayer electrodes exhibited a high optical transmittance in a visibje region. The threshold voltage, the mobility, and the on/off-current ratio of the TFTs with IZTO/Ag/IZTO multilayer electrodes were-enhanced in comparison with those of the TFTs with ITO electrodes. The source/drain contact resistance of. the IZTO TFTs with IZTO/Ag/IZTO multilayer electrodes was smaller than that of the IZTO TFTs with ITO electrodes, resulting in enhancement of their electrical characteristics. (C) 2014 The Japan Society of Applied Physics
- URI
- http://iopscience.iop.org/article/10.7567/JJAP.53.086502/metahttp://hdl.handle.net/20.500.11754/47898
- ISSN
- 0021-4922; 1347-4065
- DOI
- 10.7567/JJAP.53.086502
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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