Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박진성 | - |
dc.date.accessioned | 2018-03-16T04:15:13Z | - |
dc.date.available | 2018-03-16T04:15:13Z | - |
dc.date.issued | 2014-02 | - |
dc.identifier.citation | JOURNAL OF ELECTROCERAMICS, 권: 32, 호: 4, 페이지: 319-323 | en_US |
dc.identifier.issn | 1385-3449 | - |
dc.identifier.issn | 1573-8663 | - |
dc.identifier.uri | https://link.springer.com/article/10.1007%2Fs10832-014-9902-8 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/47766 | - |
dc.description.abstract | Thin film transistors (TFTs) with amorphous zinc tin oxide (ZTO) channel layer were fabricated by a simple and low-cost solution process, prepared by dissolving 0.2 M of zinc acetate dihydrate and tin chloride dihydrate in 20 mL of 2-methoxyethanol. All ZTO thin films showed amorphous phases and no impurities (no carbon and chlorine content) even at process temperature of 350 A degrees C. As the Sn ratio in ZTO films increased, the values of saturated mobility (u(sat)) and subthreshold gate swing (SS) exhibited a parabolic behavior in ZTO TFTs, depicting that the mu(sat) and SS values were a maximum (3.4 cm(2)/V.s) and minimum (0.38 V/decade) at Zn/Sn = 1 ratio. Interestingly, the x-ray absorption and X-ray photoemission spectroscopy revealed the origin of parabolic behavior, indicating not only to improve a charge transport in conduction bands but also to increase the Sn4+/Sn2+ ratio at the peak values (Sn/(Zn + Sn) = 1). | en_US |
dc.description.sponsorship | IT R&D program of MKE/KEITMSIP under the ITRC | en_US |
dc.language.iso | en | en_US |
dc.publisher | SPRINGER, VAN GODEWIJCKSTRAAT 30, 3311 GZ DORDRECHT, NETHERLANDS | en_US |
dc.subject | Thin film transistor | en_US |
dc.subject | Oxide semiconductor | en_US |
dc.subject | Solution process | en_US |
dc.subject | THIN-FILM TRANSISTORS | en_US |
dc.subject | SEMICONDUCTOR | en_US |
dc.title | Parabolic behavior of solution processed ZnSnO device performances depending on Zn/Sn ratios | en_US |
dc.title.alternative | Sn ratios | en_US |
dc.type | Article | en_US |
dc.relation.volume | 32 | - |
dc.identifier.doi | 10.1007/s10832-014-9902-8 | - |
dc.relation.page | 319-323 | - |
dc.relation.journal | JOURNAL OF ELECTROCERAMICS | - |
dc.contributor.googleauthor | Jeon, Hye-Ji | - |
dc.contributor.googleauthor | Chung, Kwun-Bum | - |
dc.contributor.googleauthor | Park, Jin-Seong | - |
dc.relation.code | 2014033031 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | jsparklime | - |
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