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Fluorine contamination in yttrium-doped barium zirconate film deposited by atomic layer deposition

Title
Fluorine contamination in yttrium-doped barium zirconate film deposited by atomic layer deposition
Author
김영범
Keywords
PEROVSKITE-TYPE OXIDES; THIN-FILMS; PROTONIC CONDUCTORS; HIGH-TEMPERATURES; CONDUCTIVITY; PRECURSORS; TRANSPORT; STABILITY; BACEO3; CERATE
Issue Date
2012-01
Publisher
American Vacuum Society
Citation
Journal of Vacuum Science & Technology. A, 2012, 30(1), P.01A161
Abstract
The authors have investigated the change of chemical composition, crystallinity, and ionic conductivity in fluorine contaminated yttrium-doped barium zirconate (BYZ) fabricated by atomic layer deposition (ALD). It has been identified that fluorine contamination can significantly affect the conductivity of the ALD BYZ. The authors have also successfully established the relationship between process temperature and contamination and the source of fluorine contamination, which was the perfluoroelastomer O-ring used for vacuum sealing. The total removal of fluorine contamination was achieved by using all-metal sealed chamber instead of O-ring seals. (C) 2012 American Vacuum Society. [DOI: 10.1116/1.3670750]
URI
http://avs.scitation.org/doi/abs/10.1116/1.3670750
ISSN
0734-2101; 0022-5355
DOI
10.1116/1.3670750
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MECHANICAL ENGINEERING(기계공학부) > Articles
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