Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 정재경 | - |
dc.date.accessioned | 2018-03-15T07:37:05Z | - |
dc.date.available | 2018-03-15T07:37:05Z | - |
dc.date.issued | 2016-04 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v. 108, NO 15, Page. 1-1 | en_US |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.issn | 1077-3118 | - |
dc.identifier.uri | https://aip.scitation.org/doi/10.1063/1.4947063 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/47358 | - |
dc.description.abstract | Transition tantalum induced crystallization of amorphous zinc tin oxide (a-ZTO) was observed at low temperature annealing of 300 degrees C. Thin-film transistors (TFTs) with an a-ZTO channel layer exhibited a reasonable field-effect mobility of 12.4 cm(2)/Vs, subthreshold swing (SS) of 0.39V/decade, threshold voltage (V-TH) of 1.5 V, and I-ON/OFF ratio of similar to 10(7). A significant improvement in the field-effect mobility (up to similar to 33.5 cm(2)/V s) was achieved for crystallized ZTO TFTs: this improvement was accomplished without compromising the SS, V-TH, or I-ON/OFF ratio due to the presence of a highly ordered microstructure. Published by AIP Publishing. | en_US |
dc.description.sponsorship | This study was supported by the National Research Foundation of Korea (NRF) grant funded the Korean government (NRF-2015R1A2A2A01003848) and the industrial strategic technology development program funded by MKE/KEIT (10051403). | en_US |
dc.language.iso | en | en_US |
dc.publisher | AMER INST PHYSICS | en_US |
dc.subject | ROOM-TEMPERATURE | en_US |
dc.subject | FABRICATION | en_US |
dc.title | Metal-induced crystallization of amorphous zinc tin oxide semiconductors for high mobility thin-film transistors | en_US |
dc.type | Article | en_US |
dc.relation.no | 15 | - |
dc.relation.volume | 108 | - |
dc.identifier.doi | 10.1063/1.4947063 | - |
dc.relation.page | 1-1 | - |
dc.relation.journal | APPLIED PHYSICS LETTERS | - |
dc.contributor.googleauthor | Hwang, Ah Young | - |
dc.contributor.googleauthor | Kim, Sang Tae | - |
dc.contributor.googleauthor | Ji, Hyuk | - |
dc.contributor.googleauthor | Shin, Yeonwoo | - |
dc.contributor.googleauthor | Jeong, Jae Kyeong | - |
dc.relation.code | 2016003157 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | jkjeong1 | - |
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