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Effect of Al concentration on the electrical characteristics of solution-processed Al doped ZnSnO thin film transistors

Title
Effect of Al concentration on the electrical characteristics of solution-processed Al doped ZnSnO thin film transistors
Author
박진성
Keywords
Oxide semiconductor; Solution process; Thin film transistor; X-ray photoemission spectroscopy; BIAS STRESS STABILITY; LOW-TEMPERATURE; CHANNEL LAYER; ZINC-OXIDE; SEMICONDUCTOR
Issue Date
2014-01
Publisher
ELSEVIER SCI LTD, THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, OXON, ENGLAND
Citation
CERAMICS INTERNATIONAL , Vol. 40, No. 6, p. 8769-8774
Abstract
Amorphous AlZnSnO (AZTO) channel layer thin film transistors (TFTs) with various Al doping ratios were fabricated using a solution process. Electrical, structural, and optical properties were systematically investigated as a function of Al doping. At an appropriate level of Al doping (3.45 at%), optimal electrical properties of AZTO TFTs were obtained, including mobility of 2.41 cm(2)/V s and a subthreshold swing of 0.68 V/decade. From analyses of the chemical bonding states and optical band structure, this is attributed to suppression of oxygen related defect formation and a decrease of the band gap. (C) 2014 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
URI
https://www.sciencedirect.com/science/article/pii/S0272884214001254http://hdl.handle.net/20.500.11754/46952
ISSN
0272-8842; 1873-3956
DOI
10.1016/j.ceramint.2014.01.098
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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