Self-forming Al oxide barrier for nanoscale Cu interconnects created by hybrid atomic layer deposition of Cu-Al alloy
- Title
- Self-forming Al oxide barrier for nanoscale Cu interconnects created by hybrid atomic layer deposition of Cu-Al alloy
- Author
- 박종완
- Keywords
- COPPER-FILMS; ADHESION; DIFFUSION; GROWTH
- Issue Date
- 2014-01
- Publisher
- A V S AMER INST PHYSICS, STE 1 NO 1, 2 HUNTINGTON QUADRANGLE, MELVILLE, NY 11747-4502 USA
- Citation
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A 권: 32 호: 1
- Abstract
- The authors synthesized a Cu-Al alloy by employing alternating atomic layer deposition (ALD) surface reactions using Cu and Al precursors, respectively. By alternating between these two ALD surface chemistries, the authors fabricated ALD Cu-Al alloy. Cu was deposited using bis(1-dimethylamino-2-methyl-2-butoxy) copper as a precursor and H-2 plasma, while Al was deposited using trimethylaluminum as the precursor and H-2 plasma. The Al atomic percent in the Cu-Al alloy films varied from 0 to 15.6 at. %. Transmission electron microscopy revealed that a uniform Al-based interlayer self-formed at the interface after annealing. To evaluate the barrier properties of the Al-based interlayer and adhesion between the Cu-Al alloy film and SiO2 dielectric, thermal stability and peel-off adhesion tests were performed, respectively. The Al-based interlayer showed similar thermal stability and adhesion to the reference Mn-based interlayer. Our results indicate that Cu-Al alloys formed by alternating ALD are suitable seed layer materials for Cu interconnects. (C) 2014 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.
- URI
- http://dx.doi.org/10.1116/1.4845595http://hdl.handle.net/20.500.11754/46684
- ISSN
- 0734-2101
- DOI
- 10.1116/1.4845595
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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