Effects of zirconium doping on the characteristics of tin oxide thin film transistors
- Title
- Effects of zirconium doping on the characteristics of tin oxide thin film transistors
- Author
- 박종완
- Keywords
- Carrier trapping; Device performance; Positive stress; Subthreshold swing; Thin-film transistor (TFTs); Tin oxide thin film; Turn-on voltages; Zirconium doping
- Issue Date
- 2013-12
- Publisher
- Elsevier Science B.V., Amsterdam.
- Citation
- Microelectronics Reliability, Vol.53, No.12 [2013], p1875-1878
- Abstract
- Thin-film transistors (TFTs) with zirconium-doped tin oxide (ZSO) channels were fabricated by co-sputtering Sn and Zr metal targets. The effect of Zr on the performance of SnOx-based TFTs was studied. TFTs with an intrinsic SnOx channel did not show promising performance. However, ZSO TFTs exhibited improved electrical properties, with increased ION/IOFF and decreased subthreshold swing. The influence of zirconium doping on bias stability in tin oxide TFTs was also investigated. ZSO TFTs exhibited turn-on voltage (VON) shifts of +9 V for positive stress bias, compared with +18 V for intrinsic SnOx TFTs. The improvements in device performance and stability were attributed to reduced carrier concentration induced by carrier trapping at Zr impurity sites.
- URI
- http://www.sciencedirect.com/science/article/pii/S0026271413001741?via%3Dihubhttp://hdl.handle.net/20.500.11754/46366
- ISSN
- 0026-2714
- DOI
- 10.1016/j.microrel.2013.07.001
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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