The effect of Ta doping in polycrystalline TiOx and the associated thin film transistor properties
- Title
- The effect of Ta doping in polycrystalline TiOx and the associated thin film transistor properties
- Author
- 박진성
- Issue Date
- 2013-11
- Publisher
- AMER INST PHYSICS, CIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA
- Citation
- APPLIED PHYSICS LETTERS, 권: 103, 호; 21
- Abstract
- Tantalum (Ta) is suggested to act as an electron donor and crystal phase stabilizer in titanium oxide (TiOx). A transition occurs from an amorphous state to a crystalline phase at an annealing temperature above 300 degrees C in a vacuum ambient. As the annealing temperature increases from 300 degrees C to 450 degrees C, the mobility increases drastically from 0.07 cm(2)/Vs to 0.61 cm(2)/Vs. The remarkable enhancement of thin film transistor performance is suggested to be due to the splitting of Ti 3d band orbitals as well as the increase in Ta5+ ions that can act as electron donors. (C) 2013 AIP Publishing LLC.
- URI
- http://aip.scitation.org/doi/10.1063/1.4831783http://hdl.handle.net/20.500.11754/46291
- ISSN
- 0003-6951; 1077-3118
- DOI
- 10.1063/1.4831783
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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