35 0

The effect of Ta doping in polycrystalline TiOx and the associated thin film transistor properties

Title
The effect of Ta doping in polycrystalline TiOx and the associated thin film transistor properties
Author
박진성
Issue Date
2013-11
Publisher
AMER INST PHYSICS, CIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA
Citation
APPLIED PHYSICS LETTERS, 권: 103, 호; 21
Abstract
Tantalum (Ta) is suggested to act as an electron donor and crystal phase stabilizer in titanium oxide (TiOx). A transition occurs from an amorphous state to a crystalline phase at an annealing temperature above 300 degrees C in a vacuum ambient. As the annealing temperature increases from 300 degrees C to 450 degrees C, the mobility increases drastically from 0.07 cm(2)/Vs to 0.61 cm(2)/Vs. The remarkable enhancement of thin film transistor performance is suggested to be due to the splitting of Ti 3d band orbitals as well as the increase in Ta5+ ions that can act as electron donors. (C) 2013 AIP Publishing LLC.
URI
http://aip.scitation.org/doi/10.1063/1.4831783http://hdl.handle.net/20.500.11754/46291
ISSN
0003-6951; 1077-3118
DOI
10.1063/1.4831783
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE