Investigation of a selective switching device using a phase-change material for a 3-dimensional PCRAM array
- Title
- Investigation of a selective switching device using a phase-change material for a 3-dimensional PCRAM array
- Author
- 송윤흡
- Keywords
- PCRAM; Selective device; GST; GCT
- Issue Date
- 2013-05
- Publisher
- Korean SOC Physical
- Citation
- Journal of the Korean Physical Society, 2013, 62(9), P.1258-1263
- Abstract
- A selective switching device utilizing a phase-change material was investigated. In this work, we present a new concept to realize serially a selective switching and memory operation in a multiple phase-change memory with only phase-change materials without any semiconductor switching device. A phase-change material for selective switching can be expected to have a higher resistance amorphous phase and to show lower melting and crystallization temperatures than a phase-change material for a memory. Here, we present a structural method to obtain the above requirements. In addition, we confirm the switching operation by a selective current pulse for multiple phase-change materials from the experiment. From these results, we expected that one of the multiple phasechange materials can be replaced in a switching device without the need for an additional selective device, and that such a device would be feasible for 3-dimensional PCM architecture.
- URI
- https://link.springer.com/article/10.3938%2Fjkps.62.1258
- ISSN
- 0374-4884
- DOI
- 10.3938/jkps.62.1258
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
- Files in This Item:
There are no files associated with this item.
- Export
- RIS (EndNote)
- XLS (Excel)
- XML