Formation mechanisms of ZnO nanocrystals embedded in an amorphous Zn(2x)Si(1-x)O(2) layer due to sputtering and annealing

Abstract

Abstract: ZnO nanocrystals embedded in an amorphous Zn2x Si1?x O2 layer inserted between a ZnO thin film and a p-Si (100) substrate were formed by magnetron sputtering and thermal annealing. High-resolution transmission electron microscopy (HRTEM) images showed that ZnO nanocrystals were embedded in the Zn2x Si1?x O2 layer inserted into a ZnO/Si heterostructure. The planes were observed for the ZnO nanocrystals with a [0001] orientation direction, and the and the {0001} planes were observed for the ZnO nanocrystal with a orientation direction. The formation of ZnO nanocrystals consisting of the most stable {0001} and facet planes was attributed to atomic rearrangement of Zn and O atoms to reduce the surface energy during the thermal annealing and the cooling processes. The formation mechanisms for the ZnO nanocrystals embedded in an amorphous Zn2x Si1?x O2 layer inserted into a ZnO/p-Si (100) heterostructure were described on the basis of the HRTEM images. [ABSTRACT FROM AUTHOR]Copyright of Journal of Alloys & Compounds is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)