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dc.contributor.author최창환-
dc.date.accessioned2018-03-12T04:42:14Z-
dc.date.available2018-03-12T04:42:14Z-
dc.date.issued2013-12-
dc.identifier.citationJournal of Nanoscience and Nanotechnology, Vol.13, No.12 [2013], p7814-7819en_US
dc.identifier.issn1533-4880-
dc.identifier.urihttp://www.ingentaconnect.com/content/asp/jnn/2013/00000013/00000012/art00005;jsessionid=96i2tqdsedih9.x-ic-live-03-
dc.description.abstractZinc sulfide (ZnS) thin film was deposited on the flexible polyethylene-terephtalate (PET) polymer substrate by radio frequency (RF) magnetron sputtering system. ZnS film has a critical thickness range affecting crystal structure where it shows preferred orientation with intensity peak of X ray diffractometer at 28.4 degrees for ZnS thinner than 200 nm while hexagonal wurtzite and cubic zinc blend (101) are co-existed for film thicker than 200 rim. Optical band gap energy (E-g) decreases with increasing RF powers, resulting from increase in film thickness. ZnS films on PET is 3.68 similar to 3.86 eV which is lower than that of ZnS on the rigid substrate by 0.27 similar to 0.28 eV This is attributed to amount of incorporated oxygen to ZnS material as well as residual strain and disorder of grain boundary. Transmittance of ZnS on PET degrades due to surface defects and complex internal structure. Energy dispersive spectroscopy reveals out that ZnS film does not have a unity of Zn to S ratio, but it is close to stoichiometric composition with increasing thickness.en_US
dc.description.sponsorshipThis study was supported by the research fund of Hanyang University (HY-2011-00000001061).en_US
dc.language.isoenen_US
dc.publisherAmerican Scientific Publishersen_US
dc.subjectZnSen_US
dc.subjectPETen_US
dc.subjectPolymer Substrateen_US
dc.subjectWurtziteen_US
dc.subjectBand Gap Energyen_US
dc.subjectThin Filmen_US
dc.subjectSputteringen_US
dc.titleCharacteristics of Radio Frequency-Sputtered ZnS on the Flexible Polyethylene Terephthalate (PET) Substrateen_US
dc.typeArticleen_US
dc.relation.volume13-
dc.identifier.doi10.1166/jnn.2013.8120-
dc.relation.page7814-7819-
dc.relation.journalJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY-
dc.contributor.googleauthorYoo, D.-
dc.contributor.googleauthorChoi, M.-S.-
dc.contributor.googleauthorChung, C.-
dc.contributor.googleauthorHeo, S.C.-
dc.contributor.googleauthorKim, D.-
dc.contributor.googleauthorChoi, C.-
dc.relation.code2013010833-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDIVISION OF MATERIALS SCIENCE AND ENGINEERING-
dc.identifier.pidcchoi-
dc.identifier.researcherID57195992054-
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COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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