Stochastic Patterning Simulation Using Attenuated Phase-Shift Mask for Extreme Ultraviolet Lithography
- Title
- Stochastic Patterning Simulation Using Attenuated Phase-Shift Mask for Extreme Ultraviolet Lithography
- Author
- 안진호
- Keywords
- EUV WAVELENGTHS; ARF LITHOGRAPHY; PRINTABILITY; FLARE; ANGLE
- Issue Date
- 2013-08
- Publisher
- JAPAN SOCIETY OF APPLIED PHYSICS
- Citation
- Applied Physics Express, Sep 2013, 6(9), P.096501
- Abstract
- In extreme ultraviolet lithography, the photon shot noise effect is a main cause of low-quality imaging characteristics such as line edge roughness and critical dimension (CD) nonuniformity. In this study, the stochastic imaging property of an attenuated phase-shift mask (PSM) was evaluated, and the results showed that "informative" photons from the first order diffraction are essential for mitigating the photon shot noise effect. This structure exhibits a reflectivity of similar to 6% at the absorber stack and a phase shift of 180 degrees at 13.5 nm wavelength. The improved stochastic patterning properties of the PSM were compared with those of a conventional binary intensity mask. (c) 2013 The Japan Society of Applied Physics
- URI
- http://iopscience.iop.org/article/10.7567/APEX.6.096501/metahttp://hdl.handle.net/20.500.11754/45301
- ISSN
- 1882-0778
- DOI
- 10.7567/APEX.6.096501
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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