Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박진성 | - |
dc.date.accessioned | 2018-03-12T02:27:36Z | - |
dc.date.available | 2018-03-12T02:27:36Z | - |
dc.date.issued | 2013-08 | - |
dc.identifier.citation | Applied Surface Science, 15 November 2013, 28(Part B), P.373-379 | en_US |
dc.identifier.issn | 0169-4332 | - |
dc.identifier.uri | https://www.sciencedirect.com/science/article/pii/S0169433213015547?via%3Dihub | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/45152 | - |
dc.description.abstract | Various copper oxide films were successfully grown by plasma-enhanced atomic layer deposition (PEALD) at a low temperature of 100 degrees C. X-ray diffraction analysis of the films indicated that phase-controlled deposition of CuOx phases (0 <= x< 1) was possible by controlling the number of Cu deposition steps during one PEALD cycle with a fixed oxidation step. When Cu deposition was executed in one step, an amorphous CuOx (x=0.9) film with a smooth surface (RMS roughness of 0.97 nm) was obtained. On the other hand, when the number of Cu deposition steps was increased to three, a CuOx (x=0.6) thin film with a polycrystalline phase (grain size: 25 nm) was obtained. The as-deposited CuO0.6 film showed p-type conductivity (Hall mobility similar to 37 cm(2)/V.s and hole concentration similar to 5.4 x 10(14) cm(-3)). Moreover, p-type CuO0.6/n-type ZnO heterojunction diodes fabricated on a flexible polyethylene terephthalate substrate exhibited electrical rectification with a threshold voltage of 1.2 V. (C) 2013 Elsevier B.V. All rights reserved. | en_US |
dc.description.sponsorship | This work was supported by the research fund of the Korea Institute of Materials Science, a subsidiary branch of the Korea Institute of Machinery and Materials. In addition, the work was supported by the IT R&D program of MKE/KEIT (Grant No.10041416, the core technology development of light and space adaptable new mode display for energy saving on 7 inch and 2 W) and by the MSIP (Ministry of Science, ICT & Future Planning), Korea, under the ITRC (Information Technology Research Center)) support program NIPA-2013-(H0301-13-1004) supervised by the NIPA(National IT Industry Promotion Agency). | en_US |
dc.language.iso | en | en_US |
dc.publisher | Elsevier Science B.V., Amsterdam. | en_US |
dc.subject | Cuprous oxide | en_US |
dc.subject | PEALD | en_US |
dc.subject | p-type | en_US |
dc.subject | Semiconductor | en_US |
dc.subject | XPS | en_US |
dc.subject | XRD | en_US |
dc.subject | Heterojunction | en_US |
dc.title | Controlled growth and properties of p-type cuprous oxide films by plasma-enhanced atomic layer deposition at low temperature | en_US |
dc.type | Article | en_US |
dc.relation.volume | 285 | - |
dc.identifier.doi | 10.1016/j.apsusc.2013.08.063 | - |
dc.relation.page | 373-379 | - |
dc.relation.journal | APPLIED SURFACE SCIENCE | - |
dc.contributor.googleauthor | Kwon, J. D. | - |
dc.contributor.googleauthor | Kwon, S. H. | - |
dc.contributor.googleauthor | Jung, T. H. | - |
dc.contributor.googleauthor | Nam, K. S. | - |
dc.contributor.googleauthor | Chung, K. B. | - |
dc.contributor.googleauthor | Kim, D. H. | - |
dc.contributor.googleauthor | Park, J. S. | - |
dc.relation.code | 2013008982 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | jsparklime | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.