Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 김태환 | - |
dc.date.accessioned | 2018-03-10T04:33:36Z | - |
dc.date.available | 2018-03-10T04:33:36Z | - |
dc.date.issued | 2013-10 | - |
dc.identifier.citation | Thin Solid Films, 2013, 544, P.433-436 | en_US |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.uri | https://ac.els-cdn.com/S0040609013003568/1-s2.0-S0040609013003568-main.pdf?_tid=c3a89a13-2856-4f56-bde5-2f8a958549a7&acdnat=1520510591_248bf90da9e2cba967d6a20d2224befd | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/44668 | - |
dc.description.abstract | The electrical characteristics of organic bistable memory devices (OBDs) fabricated utilizing CuInS2 (CIS) core or CIS-ZnS core-shell quantum dots (QDs) embedded in a poly(methylmethacrylate) (PMMA) layer on indium-tin-oxide (ITO) coated glass substrates were investigated. X-ray photoelectron spectroscopy spectra demonstrated that the stoichiometries of the QDs embedded in a PMMA layer were CIS or CIS-ZnS QDs. Current-voltage measurements on Al/CIS or CIS-ZnS QDs embedded in PMMA layer/ITO glass devices at 300 K showed current bistabilities. The maximum ON/OFF current ratios of the OBDs with CIS or CIS-ZnS QDs were approximately 1 x 10(3) and 1 x 10(5), respectively. The retention number of ON and OFF states was measured by 1 x 10(5). The memory mechanisms of the OBDs with CIS or CIS-ZnS QDs are described on the basis of the experimental results. (C) 2013 Elsevier B. V. All rights reserved. | en_US |
dc.description.sponsorship | This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2011-0025491). | en_US |
dc.language.iso | en | en_US |
dc.publisher | ELSEVIER SCIENCE SA, PO BOX 564, 1001 LAUSANNE, SWITZERLAND | en_US |
dc.subject | Organic bistable memory devices | en_US |
dc.subject | CuInS2 quantum dot | en_US |
dc.subject | PMMA | en_US |
dc.subject | CuInS2-ZnS core-shell quantum dot | en_US |
dc.subject | FILMS | en_US |
dc.title | Effect of the ZnS shell layer on the charge storage capabilities of organic bistable memory devices fabricated utilizing CuInS2-ZnS core-shell quantum dots embedded in a poly(methylmethacrylate) layer | en_US |
dc.type | Article | en_US |
dc.relation.volume | 544 | - |
dc.identifier.doi | 10.1016/j.tsf.2013.02.086 | - |
dc.relation.page | 433-436 | - |
dc.relation.journal | THIN SOLID FILMS | - |
dc.contributor.googleauthor | Yun, Dong Yeol | - |
dc.contributor.googleauthor | Kim, Tae Whan | - |
dc.contributor.googleauthor | Kim, Sang Wook | - |
dc.relation.code | 2013012183 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | twk | - |
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