Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박종완 | - |
dc.date.accessioned | 2018-03-09T05:26:06Z | - |
dc.date.available | 2018-03-09T05:26:06Z | - |
dc.date.issued | 2013-07 | - |
dc.identifier.citation | Current Applied Physics,2013,13(4),p S98-S102 | en_US |
dc.identifier.issn | 1567-1739 | - |
dc.identifier.uri | http://www.sciencedirect.com/science/article/pii/S1567173913000138?via%3Dihub | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/44171 | - |
dc.description.abstract | Thin-film transistors (TFTs) with hafnium-doped zinc oxide (HZO) channels were fabricated and the effects of Hf content on the performance of ZnO-based TFT were investigated. HZO TFTs exhibit improved electrical characteristics, with increased ION/IOFF and decreased subthreshold swing. We also investigated the influence of hafnium doping on the bias stability of ZnO TFTs. HZO TFTs exhibited turn-on voltage (VON) shifts of ?1 V in negative stress bias, compared with ?8 V for intrinsic ZnO TFTs. The improvement in the VON shift may be due to a reduction in the total trap density resulting from the suppression of the defect-related oxidation state of the Zn ions caused by the high binding energy of Hf ions. | en_US |
dc.description.sponsorship | This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology(2012-3001641). | en_US |
dc.language.iso | en | en_US |
dc.publisher | Elsevier Science B.V., Amsterdam. | en_US |
dc.subject | Amorphous oxide semiconductor | en_US |
dc.subject | DC magnetron sputtering | en_US |
dc.subject | Hf doping | en_US |
dc.subject | Negative bias temperature instability (NBTI) | en_US |
dc.subject | Thin film transistors | en_US |
dc.title | Improvement in the negative bias stability of zinc oxide thin-film transistors by hafnium doping | en_US |
dc.type | Article | en_US |
dc.relation.volume | 13 | - |
dc.identifier.doi | 10.1016/j.cap.2013.01.004 | - |
dc.relation.page | 98-102 | - |
dc.relation.journal | CURRENT APPLIED PHYSICS | - |
dc.contributor.googleauthor | Han, Dong-Suk | - |
dc.contributor.googleauthor | Moon, Dae-Yong | - |
dc.contributor.googleauthor | Kang, Yu-Jin | - |
dc.contributor.googleauthor | Park, Jae-Hyung | - |
dc.contributor.googleauthor | Park, Jong-Wan | - |
dc.relation.code | 2013009613 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | jwpark | - |
dc.identifier.researcherID | 57049730400 | - |
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