Very Thin Extreme Ultraviolet Mask Absorber Material for Extremely Fine Pitch Patterning
- Title
- Very Thin Extreme Ultraviolet Mask Absorber Material for Extremely Fine Pitch Patterning
- Author
- 안진호
- Keywords
- PHASE-SHIFTING MASKS; EUV WAVELENGTHS; ARF LITHOGRAPHY; PRINTABILITY; SIMULATION; FLARE; ANGLE
- Issue Date
- 2013-07
- Publisher
- IOP PUBLISHING LTD, TEMPLE CIRCUS, TEMPLE WAY, BRISTOL BS1 6BE, ENGLAND
- Citation
- Applied Physics Express, Vol.6, No.7 [2013], p076502-1 ~ 076502-3
- Abstract
- In this report, we propose palladium oxide (PdO) as an absorber material 14 nm. In our simulations, because of its low refractive index (n = 0.8634) and high extinction coefficient (k = 0.0536), an attenuated phase shift mask with a very thin (similar to 20 nm) PdO absorber can provide an EUV contrast as high as 88% at a 14 nm half pitch under dipole illumination. This results in a very limited horizontal-vertical critical dimension bias (<= 2.6 nm) and a sufficiently high normalized image log slope (>= 2.78) down to a 14 nm half pitch. (C) 2013 The Japan Society of Applied Physics
- URI
- http://iopscience.iop.org/article/10.7567/APEX.6.076502/metahttp://hdl.handle.net/20.500.11754/44044
- ISSN
- 1882-0778
- DOI
- 10.7567/APEX.6.076502
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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