Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박재근 | - |
dc.date.accessioned | 2018-03-06T08:30:44Z | - |
dc.date.available | 2018-03-06T08:30:44Z | - |
dc.date.issued | 2012-11 | - |
dc.identifier.citation | JAPANESE JOURNAL OF APPLIED PHYSICS, Nov 2012, 51(12), P.4 | en_US |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | http://iopscience.iop.org/article/10.1143/JJAP.51.120202/meta | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/42982 | - |
dc.description.abstract | We developed a cross-bar nonvolatile hybrid memory cell embedded with Ni nanocrystals in poly(3-hexylthiophene) (P3HT) with cell area of 4F(2), where F is a feature size. The cell demonstrated nonvolatile memory characteristics, such as a memory margin (I-on/I-off ratio) of similar to 5 x 10, over 103 endurance cycles of program-and-erase, and a retention time of 10(4) s at 85 degrees C. In addition, the mechanism of nonvolatile memory operation for the hybrid memory cell was confirmed by the combination of space-charge-limited current and a Fowler-Nordheim tunneling conduction. | en_US |
dc.description.sponsorship | This work was supported by a Brain Korea 21 project in 2012 and the Industrial Strategic Technology Development Program funded by the Ministry of Knowledge Economy, Korea. | en_US |
dc.language.iso | en | en_US |
dc.publisher | IOP PUBLISHING LTD, TEMPLE CIRCUS, TEMPLE WAY, BRISTOL BS1 6BE, ENGLAND | en_US |
dc.subject | ELECTRICAL BISTABILITY | en_US |
dc.subject | SYSTEM | en_US |
dc.title | Nonvolatile Hybrid Memory Cell Embedded with Ni Nanocrystals in Poly(3-hexylthiophene) | en_US |
dc.type | Article | en_US |
dc.relation.no | 12 | - |
dc.relation.volume | 51 | - |
dc.identifier.doi | 10.1143/JJAP.51.120202 | - |
dc.relation.journal | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.contributor.googleauthor | Lee, Jong-Dae | - |
dc.contributor.googleauthor | Park, Jea-Gun | - |
dc.relation.code | 2012217131 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | parkjgl | - |
dc.identifier.researcherID | 56441837500 | - |
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