Characteristics of Tin Oxide-Based Thin Film Transistors Prepared by DC Magnetron Sputtering
- Title
- Characteristics of Tin Oxide-Based Thin Film Transistors Prepared by DC Magnetron Sputtering
- Author
- 박종완
- Keywords
- Tin Oxide; Oxide Semiconductor; Thin Film Transistors; Channel Layer
- Issue Date
- 2012-04
- Publisher
- AMER SCIENTIFIC PUBLISHERS, 26650 THE OLD RD, STE 208, VALENCIA, CA 91381-0751 USA
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY,VOL12,NO4,P3341-3345
- Abstract
- Here we demonstrate the fabrication of SnOx thin-film transistors (TFTs), where SnOx thin films are deposited as an active channel layer by DC magnetron sputtering. We analyzed the effects of the oxygen partial pressure ratio and post-deposition heat treatment (PDHT) on the characteristics of the SnOx thin films. We found improved performance of the TFTs obtained by using interface modification with the optimized deposition condition of SnOx thin films. These results are helpful for fabricating oxide-TFTs, including simple binary oxide semiconductors, as an active channel layer.
- URI
- http://www.ingentaconnect.com/content/asp/jnn/2012/00000012/00000004/art00071;jsessionid=27a6leji3emqe.x-ic-live-01http://hdl.handle.net/20.500.11754/42629
- ISSN
- 1533-4880
- DOI
- 10.1166/jnn.2012.5628
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
- Files in This Item:
There are no files associated with this item.
- Export
- RIS (EndNote)
- XLS (Excel)
- XML