Repository at Hanyang UniversityCOLLEGE OF ENGINEERING[S](공과대학)MATERIALS SCIENCE AND ENGINEERING(신소재공학부)Articles
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dc.contributor.author김영호-
dc.date.accessioned2018-02-28T05:21:48Z-
dc.date.available2018-02-28T05:21:48Z-
dc.date.issued2011-05-
dc.identifier.citationJournal of nanoscience and nanotechnology, 11, 5, 4484 - 4487en_US
dc.identifier.issn1533-4880-
dc.identifier.urihttp://www.ingentaconnect.com/content/asp/jnn/2011/00000011/00000005/art00121-
dc.description.sponsorshipWe have demonstrated that the light extraction efficiency of the InGaN based multi-quantum well light-emitting diodes (LEDs) can be improved by using a single die growth (SDG) method. The SDG was performed by patterning the n-GaN and sapphire substrate with a size of single chip (600 x 250 mu m(2)) by using a laser scriber, followed by the regrowth of the n-GaN and LED structures on the laser patterned n-GaN. We fabricated lateral LED chips having the SDG structures (SDG-LEDs), in which the thickness of the regrown n-GaN was varied from 2 to 6 mu m. For comparison, we also fabricated conventional LED chips without the SDG structures. The SDG-LEDs showed lower operating voltage when compared to the conventional LEDs. In addition, the output power of the SDG-LEDs was significantly higher than that of the conventional LEDs. From optical ray tracing simulations, the increase in the thickness and sidewall angle of the regrown n-GaN and LED structures may enhance photon escapes from the tilted facets of the regrown n-GaN, followed by the increase in light output power and extraction efficiency of the SDG-LEDs.en_US
dc.language.isoenen_US
dc.publisherAMER SCIENTIFIC PUBLISHERSen_US
dc.subjectSingle Die Growthen_US
dc.subjectLaser Scribingen_US
dc.subjectGaNen_US
dc.subjectLight Emitting Diodeen_US
dc.titleImproved Light Extraction Efficiency of InGaN-Based Multi-Quantum Well Light Emitting Diodes by Using a Single Die Growthen_US
dc.typeArticleen_US
dc.relation.no5-
dc.relation.volume11-
dc.identifier.doi10.1166/jnn.2011.3703-
dc.relation.page4484-4487-
dc.relation.journalJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY-
dc.contributor.googleauthorPark, Min Joo-
dc.contributor.googleauthorKwon, K. W.-
dc.contributor.googleauthorKim, Y. H.-
dc.contributor.googleauthorPark, S. H.-
dc.contributor.googleauthorKwak, Joon Seop-
dc.relation.code2011214452-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDIVISION OF MATERIALS SCIENCE AND ENGINEERING-
dc.identifier.pidkimyh-
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