Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 김태환 | - |
dc.date.accessioned | 2018-02-23T07:32:12Z | - |
dc.date.available | 2018-02-23T07:32:12Z | - |
dc.date.issued | 2011-09 | - |
dc.identifier.citation | JAPANESE JOURNAL OF APPLIED PHYSICS, Vol.50, No.9 [2011], p | en_US |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | http://iopscience.iop.org/article/10.1143/JJAP.50.095003/meta | - |
dc.description.abstract | Carrier transport in a volatile memory device utilizing self-assembled tin dioxide quantum dots (SnO2 QDs) embedded in a polyimide (PI) layer was investigated. Current-voltage (I-V) curves showed that the Ag/PI/SnO2 QDs/PI/indium-tin-oxide (ITO) device memory device had the ability to write, read, and refresh the electric states under various bias voltages. The capacitance-voltage (C-V) curve for Ag/PI/SnO2 QDs/PI/ p-Si capacitor exhibited a counterclockwise hysteresis, indicative of the existence of sites occupied by carriers. The origin of the volatile memory effect was attributed to holes trapping in the shallow traps formed between QD and PI matrix, which determines the carrier transport characteristics in the hybrid memory device. (C) 2011 The Japan Society of Applied Physics | en_US |
dc.description.sponsorship | This work was supported by the Specialized Research Fund for the Doctoral Program of Higher Education of China(20103514120009) and Scientific Research Project for Universities funded by Fujian Education Department (JK2010005). | en_US |
dc.language.iso | en | en_US |
dc.publisher | IOP PUBLISHING LTD | en_US |
dc.subject | RANDOM ACCESS MEMORY | en_US |
dc.subject | SILICON | en_US |
dc.subject | DEPOSITION | en_US |
dc.subject | OXIDE | en_US |
dc.title | Carrier Transport in Volatile Memory Device with SnO(2) Quantum Dots Embedded in a Polyimide Layer | en_US |
dc.type | Article | en_US |
dc.relation.no | 9 | - |
dc.relation.volume | 50 | - |
dc.identifier.doi | 10.1143/JJAP.50.095003 | - |
dc.relation.page | 095003-1-095003-4 | - |
dc.relation.journal | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.contributor.googleauthor | Wu, Chaoxing | - |
dc.contributor.googleauthor | Li, Fushan | - |
dc.contributor.googleauthor | Guo, Tailiang | - |
dc.contributor.googleauthor | Kim, Tae-Whan | - |
dc.relation.code | 2011217131 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | twk | - |
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