Improvement in the negative bias temperature stability of ZnO based thin film transistors by Hf and Sn doping
- Title
- Improvement in the negative bias temperature stability of ZnO based thin film transistors by Hf and Sn doping
- Author
- 박종완
- Keywords
- Thin film transistors (TFTs); Amorphous oxide semiconductors (AOSs); Hafnium-zinc oxide (HZO); Hafnium-zinc-tin oxide (HZTO); Negative bias temperature instability (NBTI)
- Issue Date
- 2011-08
- Publisher
- Elsevier B.V.
- Citation
- Thin Solid Films, Volume 519, Issue 20, Pages 6849-6852
- Abstract
- We assessed the performance of ZnO TFTs using Si3N4 gate dielectrics after various treatments. A remarkable improvement in the transfer characteristics was obtained for the O2 plasma treated ZnO TFT and SiO2interlayer deposited ZnO TFT. Also, we developed amorphous hafnium?zinc?tin oxide (HZTO) thin film transistors (TFTs) and investigated the influence of hafnium (Hf) doping on the electrical characteristics of thehafnium?zinc oxide (HZO) thin film transistors. Doping with Hf can decrease the carrier concentration, which may result from a decrease of the field effect mobility, and reduce oxygen vacancy related defects in theinterfacial layer. Adding tin (Sn) can suppress the growth of a crystalline phase in the HZTO films. The HZTO TFTs exhibited good electrical properties with a field effect mobility of 14.33 cm2 /Vs, a subthreshold swing of 0.97 V/decade, and a high ION/OFF ratio of over 109.
- URI
- http://www.sciencedirect.com/science/article/pii/S0040609011004743?via%3Dihub
- ISSN
- 0040-6090
- DOI
- 10.1016/j.tsf.2011.01.402
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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