A NEW DIFFERENTIAL STACKED SPIRAL INDUCTOR WITH IMPROVED SELF-RESONANCE FREQUENCY
- Title
- A NEW DIFFERENTIAL STACKED SPIRAL INDUCTOR WITH IMPROVED SELF-RESONANCE FREQUENCY
- Author
- 김형동
- Keywords
- CMOS inductor; differential stacked spiral inductor; parasitic capacitance; self?resonance frequency
- Issue Date
- 2011-05
- Publisher
- John Wiley & Sons, Ltd
- Citation
- Microwave and optical technology letters, 53, 5, 1024 - 1026
- Abstract
- Abstract A new silicon?based differential stacked spiral inductor (DSSI) was implemented using a standard 0.18?μm complimentary metal?oxide semiconductor technology. Based on the measured two?port S?parameter using a standard de?embedding procedure, the self?resonance frequency, fsr, and quality factor, Q, of the new DSSI were compared with a conventional DSSI. The fsr of the new DSSI was nearly twice as high as that of the conventional DSSI, and the Q value of the new DSSI was also enhanced. ⓒ 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:1024?1026, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25900
- URI
- http://onlinelibrary.wiley.com/doi/10.1002/mop.25900/abstracthttp://hdl.handle.net/20.500.11754/40338
- ISSN
- 0895-2477
- DOI
- 10.1002/mop.25900
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
- Files in This Item:
There are no files associated with this item.
- Export
- RIS (EndNote)
- XLS (Excel)
- XML