Effect of the Ti molar ratio on the electrical characteristics of titanium-indium-zinc-oxide thin-film transistors fabricated by using a solution process
- Title
- Effect of the Ti molar ratio on the electrical characteristics of titanium-indium-zinc-oxide thin-film transistors fabricated by using a solution process
- Author
- 김태환
- Keywords
- carrier density; indium compounds; thin film transistors; titanium compounds; X-ray photoelectron spectra
- Issue Date
- 2011-10
- Publisher
- AMER INST PHYSICS, CIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA
- Citation
- APPLIED PHYSICS LETTERS, 99, 16, 161908
- Abstract
- Thin film transistors (TFTs) utilizing TiInZnO (TIZO) channel layers with different Ti molar ratios were fabricated by using a solution process. X-ray photoelectron spectroscopy spectra for the TIZO film exhibited that the Ti 2p(1/2) peak intensity increased with increasing Ti molar ratio. The addition of the Ti atoms in the TIZO films changed their carrier concentration due to the decrease of O(2-) ions, resulting in a positive shift of the threshold voltage and in a decrease of the off-current. The on/off current ratio of the TFTs with a 10% Ti molar ratio was as large as 0.21 x 10(7). (C) 2011 American Institute of Physics. [doi: 10.1063/1.3655197]
- URI
- http://aip.scitation.org/doi/abs/10.1063/1.3655197http://hdl.handle.net/20.500.11754/38116
- ISSN
- 0003-6951
- DOI
- 10.1063/1.3655197
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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