Repository at Hanyang UniversityCOLLEGE OF ENGINEERING[S](공과대학)ELECTRONIC ENGINEERING(융합전자공학부)Articles
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dc.contributor.author박재근-
dc.date.accessioned2018-02-15T19:41:21Z-
dc.date.available2018-02-15T19:41:21Z-
dc.date.issued2011-08-
dc.identifier.citationADVANCED MATERIALS, 권: 23, 호: 36, 페이지: 4183-4187en_US
dc.identifier.issn0935-9648-
dc.identifier.issn1521-4095-
dc.identifier.urihttp://onlinelibrary.wiley.com/doi/10.1002/adma.201101376/abstract-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/37836-
dc.description.abstractp?type ZnO nanowires (NWs) based on a simple hydrothermal technique with a lithium dopant are demonstrated. It is demonstrated that Li substitution of Zn occurrs because of thermally induced migration due to post?annealing in the presence of oxygen. The stable formation of p?type ZnO:Li NWs is revealed using a NW field?effect transistor and a simple n?type ZnO thin film/p?type annealed ZnO:Li NW homojunction diode.en_US
dc.description.sponsorshipThe authors thank K. Kim, S. Jung of the Korea Advanced Nano Fab Center (KANC), and Dr. S. Kim of the Samsung Advanced Institute of Technology (SAIT) for experimental processes and helpful discussions with the manuscript. J.L. was supported by a grant from the Seoul Metropolitan Science Fellowship. This work was supported by a grant from the Korea Research Foundation funded by the Korean government (MOEHRD: 2010-0014680).en_US
dc.language.isoenen_US
dc.publisherWILEY-BLACKWELL, COMMERCE PLACE, 350 MAIN ST, MALDEN 02148, MA USAen_US
dc.subjectlithiumen_US
dc.subjectnanowiresen_US
dc.subjectp-type characteristicsen_US
dc.subjectZnOen_US
dc.titlep-Type Conduction Characteristics of Lithium-Doped ZnO Nanowiresen_US
dc.typeArticleen_US
dc.relation.no36-
dc.relation.volume23-
dc.identifier.doi10.1002/adma.201101376-
dc.relation.page4183-4183-
dc.relation.journalADVANCED MATERIALS-
dc.contributor.googleauthorLee, JunSeok-
dc.contributor.googleauthorCha, SeungNam-
dc.contributor.googleauthorKim, JongMin-
dc.contributor.googleauthorNam, HyeWon-
dc.contributor.googleauthorLee, SangHyo-
dc.contributor.googleauthorKo, WonBae-
dc.contributor.googleauthorWang, Kang L.-
dc.contributor.googleauthorPark, JeaGun-
dc.contributor.googleauthorHong, JinPyo-
dc.relation.code2011200211-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDEPARTMENT OF ELECTRONIC ENGINEERING-
dc.identifier.pidparkjgl-
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