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Issue DateTitleAuthor(s)
2013-05Investigation of Dominant Nonradiative Mechanisms as a Function of Current in InGaN/GaN Light-Emitting Diodes심종인
2013-05Determination of the effect of a strain relaxation layer on the internal electric field measurement in an InGaN/GaN multiple-quantum-well structure by using electroreflectance spectroscopy심종인
2013-06Investigation of Light Extraction Efficiency in AlGaN Deep-Ultraviolet Light-Emitting Diodes심종인
2013-06Carrier density dependence of polarization switching characteristics of light emission in deep-ultraviolet AlGaN/AlN quantum well structures심종인
2013-07Dip-shaped AlGaN/AlN quantum well structures with high TE-polarized optical gain심종인
2013-07Numerical investigation of light extraction efficiency in AlGaN deep ultraviolet light-emitting diodes심종인
2013-07Droop studies for high-performance InGaN blue light-emitting diodes심종인
2013-08Current, voltage and temperature distribution modeling of light-emitting diodes based on electrical and thermal circuit analysis심종인
2013-08Investigation of Quantum-Well Shapes and Their Impacts on the Performance of InGaN/GaN Light-Emitting Diodes심종인
2013-09Correlation between the efficiency droop and the blueshift of the electroluminescence in InGaN/GaN multiple-quantum-well blue light-emitting diodes심종인
2013-10Investigation of carrier spill-over in InGaN-based light-emitting diodes by temperature dependences of resonant photoluminescence and open-circuit voltage심종인
2013-12Systematic Analysis of the Photocurrent Spectroscopy on InGaN/GaN Blue Light-Emitting Diodes심종인
2013-12Low temperature studies of the efficiency droop in InGaN-based light-emitting diodes심종인
2014-03Analysis of dominant carrier recombination mechanisms depending on injection current in InGaN green light emitting diodes심종인
2014-04Nonradiative recombination mechanisms in InGaN/GaN-based light-emitting diodes investigated by temperature-dependent measurements심종인
2014-09Measurement of piezoelectric field in single- and double-quantum-well green LEDs using electroreflectance spectroscopy심종인
2014-11Importance of the radiative recombination rate to efficiency droop in InGaN-based light-emitting diodes심종인
2014-11Influence of carrier overflow on the forward-voltage characteristics of InGaN-based light-emitting diodes심종인
2015-02Conduction Mechanisms of Leakage Currents in InGaN/GaN-Based Light-Emitting Diodes심종인
2015-02Analysis of nonradiative recombination mechanisms and their impacts on the device performance of InGaN/GaN light-emitting diodes심종인

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