Repository at Hanyang UniversityCOLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학)PHOTONICS AND NANOELECTRONICS(나노광전자학과)Articles
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Droop studies for high-performance InGaN blue light-emitting diodes
- Title
- Droop studies for high-performance InGaN blue light-emitting diodes
- Author
- 심종인
- Issue Date
- 2013-07
- Publisher
- IEEE
- Citation
- Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest, article no. 6600207, Page. 1-2
- Abstract
- An origin of the efficiency droop has been suggested as the saturation of the radiative recombination rate in InGaN quantum well at low current and subsequent increase in the nonradiative recombination rates at high current. © 2013 IEEE.
- URI
- https://ieeexplore.ieee.org/document/6600207https://repository.hanyang.ac.kr/handle/20.500.11754/184039
- Appears in Collections:
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > PHOTONICS AND NANOELECTRONICS(나노광전자학과) > Articles
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