| 2011-04 | An Explanation of Efficiency Droop in InGaN-based Light Emitting Diodes: Saturated Radiative Recombination Rate at Randomly Distributed In-Rich Active Areas | 심종인 |
| 2011-07 | Optical gain of compressively strained InGaAs/InP multiple quantum wires | 심종인 |
| 2011-09 | Highly efficient InGaN/GaN blue LEDs on large diameter Si (111) substrates comparable to those on sapphire | 심종인 |
| 2011-12 | Efficiency and Electron Leakage Characteristics in GaN-Based Light-Emitting Diodes Without AlGaN Electron-Blocking-Layer Structures | 심종인 |
| 2012-02 | Highly efficient InGaN/GaN blue LED on 8-inch Si (111) substrate | 심종인 |
| 2012-03 | Efficiency droop in AlGaInP and GaInN light-emitting diodes | 심종인 |
| 2012-03 | Analysis of efficiency droop in nitride light-emitting diodes by the reduced effective volume of InGaN active material | 심종인 |
| 2012-04 | GaN계 청색 발광 다이오드에서 저전류 스트레스 후의 광 및 전기적 특성 변화 | 심종인 |
| 2012-04 | Measurement of Internal Electric Field in GaN-Based Light-Emitting Diodes | 심종인 |
| 2012-04 | Study of droop phenomena in InGaN-based blue and green light-emitting diodes by temperature-dependent electroluminescence | 심종인 |
| 2012-06 | Three-Dimensional Analysis of Temperature Distributions Based on Circuit Modeling of Light-Emitting Diodes | 심종인 |
| 2012-06 | Effects of polarization field on vertical transport in GaN/AlGaN resonant tunneling diodes | 심종인 |
| 2012-06 | Estimate of the Nonradiative Carrier Lifetime in InGaN/GaN Quantum Well Structures by Using Time-resolved Photoluminescence | 심종인 |
| 2012-10 | Time-resolved photoluminescence studies of the optical quality of InGaN/GaN multi-quantum well grown by MOCVD-antimony surfactant effect | 심종인 |
| 2013-05 | Investigation of Dominant Nonradiative Mechanisms as a Function of Current in InGaN/GaN Light-Emitting Diodes | 심종인 |
| 2013-05 | Determination of the effect of a strain relaxation layer on the internal electric field measurement in an InGaN/GaN multiple-quantum-well structure by using electroreflectance spectroscopy | 심종인 |
| 2013-06 | Investigation of Light Extraction Efficiency in AlGaN Deep-Ultraviolet Light-Emitting Diodes | 심종인 |
| 2013-06 | Carrier density dependence of polarization switching characteristics of light emission in deep-ultraviolet AlGaN/AlN quantum well structures | 심종인 |
| 2013-07 | Dip-shaped AlGaN/AlN quantum well structures with high TE-polarized optical gain | 심종인 |
| 2013-07 | Numerical investigation of light extraction efficiency in AlGaN deep ultraviolet light-emitting diodes | 심종인 |
