Time-resolved photoluminescence studies of the optical quality of InGaN/GaN multi-quantum well grown by MOCVD-antimony surfactant effect
- Title
- Time-resolved photoluminescence studies of the optical quality of InGaN/GaN multi-quantum well grown by MOCVD-antimony surfactant effect
- Author
- 심종인
- Issue Date
- 2012-10
- Publisher
- Institute of Physics Publishing
- Citation
- Semiconductor Science and Technology, v. 27, NO. 10, article no. 105027, Page. 1-6
- Abstract
- The influence of antimony on the optical quality of InGaN/GaN multi-quantum well (MQW) grown by metalorganic chemical vapor deposition has been investigated by means of photoluminescence and time-resolved photoluminescence for a set of samples obtained for the Sb/(In+Ga) flow ratio varying from 0% to 0.12%. It has been observed that by using proper Sb flow it is possible to improve the optical properties of InGaN/GaN MQWs; however, too large Sb flows cause their optical quality to deteriorate. The Sb-related improvement of optical properties has been observed as (i) similar to 30% increase of PL intensity, (ii) reduction of temperature-induced photoluminescence quenching and (iii) elongation of PL decay time by 30%. The atomic force microscopy study and second ion mass spectrometry profiles show that optical quality improvement is connected with surfactant properties of antimony.
- URI
- https://iopscience.iop.org/article/10.1088/0268-1242/27/10/105027https://repository.hanyang.ac.kr/handle/20.500.11754/184046
- ISSN
- 0268-1242;1361-6641
- DOI
- 10.1088/0268-1242/27/10/105027
- Appears in Collections:
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > PHOTONICS AND NANOELECTRONICS(나노광전자학과) > Articles
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