A CONCURRENT TRIPLE-BAND CMOS LOW NOISE AMPLIFIER FOR FOURTH GENERATION APPLICATIONS

Abstract

In this study, a concurrent triple-band low noise amplifier (LNA) is designed for long term evolution (LTE), Mobile-WiMAX (M-WiMAX), and WiMAX services. The main topology of the proposed LNA is a cascode architecture with source degeneration using shunt resistive feedback topology for the triple-resonance characteristic. The LNA is designed using a Taiwan Semiconductor Company (TSMC) 0.18 mu m radio frequency CMOS process. To obtain the necessary gains over the operating frequency bands, a series LC branch is added in parallel with an inductor at the drain load of a single band LNA. The peak gains at LTE, M-WiMAX, and WiMAX bands are 17.6, 14.7, and 14.5 dB, respectively, whereas dissipating 8 mA from a 1.4 V supply voltage. The average noise figure over the three operating frequency bands is 4.5 dB. (C) 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:415-418, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25743