The thermal treatment effects of CrN buffer layer on crystal quality of Zn-polar ZnO films
- Title
- The thermal treatment effects of CrN buffer layer on crystal quality of Zn-polar ZnO films
- Author
- 박진섭
- Keywords
- Zinc Oxide; Annealing; Molecular Beam Epitaxy; Bugger layer; X-ray diffraction; Surface morphology; Atomic Force Microscopy; Crystal Structure
- Issue Date
- 2011-03
- Publisher
- ELSEVIER SCIENCE SA, PO BOX 564, 1001 LAUSANNE, SWITZERLAND
- Citation
- Thin Solid Films,Vol.519 No.10 [2011],3417-3420
- Abstract
- We report on the annealing effects of CrN buffer layers on the crystal quality of Zn-polar ZnO films grown by plasma assisted molecular beam epitaxy. The high-temperature (HT) annealing of CrN buffer layer improved the crystallinity of ZnO films. The full width at half maximums of (0002) and (10-11) ZnO omega-scan X-ray diffraction show 574 and 1296 arcsec, respectively, which show the 3 and 2 times narrower values than those of ZnO films without the annealing process. Moreover, the HT annealing can be effective method to improve the surface smoothness of ZnO film and reduce the crystal tilting. (C) 2010 Elsevier B.V. All rights reserved.
- URI
- http://www.sciencedirect.com/science/article/pii/S0040609010018080?via%3Dihub
- ISSN
- 0040-6090
- DOI
- 10.1016/j.tsf.2010.12.159
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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