Cu(In,Ga)Se(2) Thin Film Preparation from a Cu(In,Ga) Metallic Alloy and Se Nanoparticles by an Intense Pulsed Light Technique
- Title
- Cu(In,Ga)Se(2) Thin Film Preparation from a Cu(In,Ga) Metallic Alloy and Se Nanoparticles by an Intense Pulsed Light Technique
- Author
- 김학성
- Keywords
- CIGS thin film; chalcopyrite; intense pulsed light; solar cells
- Issue Date
- 2011-02
- Publisher
- SPRINGER, 233 SPRING ST, NEW YORK, NY 10013 USA
- Citation
- JOURNAL OF ELECTRONIC MATERIALS,권: 40 호: 2 페이지: 122-126
- Abstract
- The main contribution of this paper is the development of a novel process for the formation of copper indium gallium diselenide (CIGS) films. CIGS films with a thickness of 4 mu m and grain size from 0.3 mu m to 1 mu m were prepared from a Cu(In0.7Ga0.3) (CIG) metallic alloy and Se nanoparticles by the intense pulsed light (IPL) technique. The melting of the CIG and Se nanoparticles and nucleation of CIGS occurred in a very short reaction time of 2 ms. It is believed that the Se diffuses into the CIG lattice to form the CIGS chalcopyrite crystal structure. The tetragonal chalcopyrite crystal structure was confirmed by x-ray powder diffraction (XRD), while the microstructure and composition were determined by field-emission scanning electron microscopy (FESEM), energy-dispersive x-ray spectroscopy (EDAX), and x-ray fluorescence (XRF) spectroscopy.
- URI
- https://link.springer.com/article/10.1007%2Fs11664-010-1431-xhttp://hdl.handle.net/20.500.11754/35504
- ISSN
- 0361-5235
- DOI
- 10.1007/s11664-010-1431-x
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > MECHANICAL ENGINEERING(기계공학부) > Articles
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