Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 전형탁 | - |
dc.date.accessioned | 2018-02-05T06:11:18Z | - |
dc.date.available | 2018-02-05T06:11:18Z | - |
dc.date.issued | 2016-03 | - |
dc.identifier.citation | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, v. 34, NO 3, Article number 031502, Page. 502-502 | en_US |
dc.identifier.issn | 0734-2101 | - |
dc.identifier.issn | 1520-8559 | - |
dc.identifier.uri | http://avs.scitation.org/doi/10.1116/1.4943090 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/35420 | - |
dc.description.abstract | In this study, the effects of a thin Ru interlayer on the thermal and morphological stability of NiSi have been investigated. Ru and Ni thin films were deposited sequentially to form a Ni/Ru/Si bilayered structure, without breaking the vacuum, by remote plasma atomic layer deposition (RPALD) on a p-type Si wafer. After annealing at various temperatures, the thermal stabilities of the Ni/Ru/Si and Ni/Si structures were investigated by various analysis techniques. The results showed that the sheet resistance of the Ni/Ru/Si sample was consistently lower compared to the Ni/Si sample over the entire temperature range. Although both samples exhibited the formation of NiSi2 phases at an annealing temperature of 800 degrees C, as seen with glancing angle x-ray diffraction, the peaks of the Ni/Ru/Si sample were observed to have much weaker intensities than those obtained for the Ni/Si sample. Moreover, the NiSi film with a Ru interlayer exhibited a better interface and improved surface morphologies compared to the NiSi film without a Ru interlayer. These results show that the phase transformation of NiSi to NiSi(2)was retarded and that the smooth NiSi/Si interface was retained due to the activation energy increment for NiSi(2)nucleation that is caused by adding a Ru interlayer. Hence, it can be said that the Ru interlayer deposited by RPALD can be used to control the phase transformation and physical properties of nickel silicide phases. (C) 2016 American Vacuum Society. | en_US |
dc.description.sponsorship | This work was supported by a National Research Foundation of Korea (NRF) grant funded by the Korean Government (MEST) (Grant No. NRF-2014R1A2A1A11053174). | en_US |
dc.language.iso | en | en_US |
dc.publisher | A V S AMER INST PHYSICS | en_US |
dc.subject | NISI FILMS | en_US |
dc.subject | ELECTRICAL CHARACTERIZATION | en_US |
dc.subject | THIN-FILMS | en_US |
dc.subject | MONOSILICIDE | en_US |
dc.subject | NUCLEATION | en_US |
dc.subject | SUBSTRATE | en_US |
dc.subject | SYSTEMS | en_US |
dc.subject | PHASE | en_US |
dc.subject | NI/SI | en_US |
dc.title | Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition | en_US |
dc.type | Article | en_US |
dc.relation.no | 3 | - |
dc.relation.volume | 34 | - |
dc.identifier.doi | 10.1116/1.4943090 | - |
dc.relation.page | 502-502 | - |
dc.relation.journal | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | - |
dc.contributor.googleauthor | Lee, Inhye | - |
dc.contributor.googleauthor | Park, Jingyu | - |
dc.contributor.googleauthor | Jeon, Heeyoung | - |
dc.contributor.googleauthor | Kim, Hyunjung | - |
dc.contributor.googleauthor | Shin, Changhee | - |
dc.contributor.googleauthor | Shin, Seokyoon | - |
dc.contributor.googleauthor | Lee, Kunyoung | - |
dc.contributor.googleauthor | Jeon, Hyeongtag | - |
dc.relation.code | 2016001738 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | hjeon | - |
dc.identifier.researcherID | P-3193-2015 | - |
dc.identifier.orcid | http://orcid.org/0000-0003-2502-7413 | - |
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