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dc.contributor.author정희준-
dc.date.accessioned2018-02-05T05:22:52Z-
dc.date.available2018-02-05T05:22:52Z-
dc.date.issued2015-01-
dc.identifier.citationNANOTECHNOLOGY, v. 26, No. 2en_US
dc.identifier.issn0957-4484-
dc.identifier.issn1361-6528-
dc.identifier.urihttp://iopscience.iop.org/article/10.1088/0957-4484/26/2/025601/meta-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/35406-
dc.description.abstractThe realization of high-yield, stable molecular junctions has been a long-standing challenge in the field of molecular electronics research, and it is an essential prerequisite for characterizing and understanding the charge transport properties of molecular junctions prior to their device applications. Here, we introduce a new approach for obtaining high-yield, vertically structured metal-molecule-metal junctions in which the top metal electrodes are formed on alkanethiolate self-assembled monolayers by a direct metal transfer method without the use of any additional protecting interlayers in the junctions. The fabricated alkanethiolate molecular devices exhibited considerably improved device yields (similar to 70%) in comparison to the typical low device yields ( less than a few %) of molecular junctions in which the top metal electrodes are fabricated using the conventional evaporation method. We compared our method with other molecular device fabrication methods in terms of charge transport parameters. This study suggests a potential new device platform for realizing robust, high-yield molecular junctions and investigating the electronic properties of devices.en_US
dc.description.sponsorshipThe authors appreciate the financial support from the National Creative Research Laboratory program (Grant No. 2012026372) and from the National Core Research Center program (Grant No. R15-2008-006-03002-0) through the National Research Foundation of Korea (NRF) funded by the Korean Ministry of Science, ICT and Future Planning. MRC and YDP were supported by the NRF (2014-023563, 2008-0061906). We also appreciate Inter-university Semiconductor Research Center (ISRC) of Seoul National University.en_US
dc.language.isoen_USen_US
dc.publisherIOP PUBLISHING LTDen_US
dc.subjectmolecular electronicsen_US
dc.subjectself-assembled monolayeren_US
dc.subjectmetal-molecule-metal junctionen_US
dc.subjectalkanethiolatesen_US
dc.subjectdirect metal transferen_US
dc.subjectSELF-ASSEMBLED MONOLAYERSen_US
dc.subjectGRAPHENE OXIDE-FILMSen_US
dc.subjectLARGE-AREAen_US
dc.subjectELECTRICAL CONTACTSen_US
dc.subjectTRANSPORT JUNCTIONSen_US
dc.subjectELECTRONIC DEVICESen_US
dc.subjectORGANIC-MOLECULESen_US
dc.subjectCHARGE-TRANSPORTen_US
dc.subjectTOP-CONTACTSen_US
dc.subjectRESISTANCEen_US
dc.titleA new approach for high-yield metal-molecule-metal junctions by direct metal transfer methoden_US
dc.typeArticleen_US
dc.relation.no2-
dc.relation.volume26-
dc.identifier.doi10.1088/0957-4484/26/2/025601-
dc.relation.page256011-256020-
dc.relation.journalNANOTECHNOLOGY-
dc.contributor.googleauthorJeong, HyunHak-
dc.contributor.googleauthorKim, DongKu-
dc.contributor.googleauthorKim, PilKwang-
dc.contributor.googleauthorCho, MyungRae-
dc.contributor.googleauthorHwang, WangTaek-
dc.contributor.googleauthorJang, YeonSik-
dc.contributor.googleauthorCho, KyungJune-
dc.contributor.googleauthorMin, Misook-
dc.contributor.googleauthorXiang, Dong-
dc.contributor.googleauthorJeong, HeeJun-
dc.relation.code2015001023-
dc.sector.campusE-
dc.sector.daehakCOLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E]-
dc.sector.departmentDEPARTMENT OF APPLIED PHYSICS-
dc.identifier.pidhjeong-
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COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > APPLIED PHYSICS(응용물리학과) > Articles
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