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dc.contributor.author김래영-
dc.date.accessioned2018-02-03T06:42:45Z-
dc.date.available2018-02-03T06:42:45Z-
dc.date.issued2011-03-
dc.identifier.citation, Page. 359-363en_US
dc.identifier.issn1048-2334-
dc.identifier.urihttp://ieeexplore.ieee.org/document/5744621/-
dc.description.abstractThis paper proposed a novel fault detection circuit comparing the gate voltage of IGBT. The proposed scheme is operated to protect IGBT under short-circuit faults such as hard switch-fault (HSF). The proposed circuit consists of two parts. One is the difference generator which generates a difference between a gate voltage and an input voltage. The other is the short-circuit fault detector using a charged voltage of capacitor for short-circuit fault detection. The feasibility of the proposed short-circuit detecting scheme is verified by simulation results.en_US
dc.language.isoenen_US
dc.publisherIEEEen_US
dc.subjectInsulated gate bipolar transistorsen_US
dc.subjectLogic gatesen_US
dc.subjectFault detectionen_US
dc.subjectElectrical fault detectionen_US
dc.subjectGeneratorsen_US
dc.subjectInductanceen_US
dc.titleA novel fault detection circuit for short-circuit faults of IGBTen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/APEC.2011.5744621-
dc.relation.page359-363-
dc.contributor.googleauthorKim, Min Sub-
dc.contributor.googleauthorPark, Byoung Gun-
dc.contributor.googleauthorKim, Rae Young-
dc.contributor.googleauthorHyun, Dong Seok-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDIVISION OF ELECTRICAL AND BIOMEDICAL ENGINEERING-
dc.identifier.pidrykim-
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRICAL AND BIOMEDICAL ENGINEERING(전기·생체공학부) > Articles
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