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dc.contributor.author최병덕-
dc.date.accessioned2018-02-03T04:26:51Z-
dc.date.available2018-02-03T04:26:51Z-
dc.date.issued2011-03-
dc.identifier.citationJapanese Journal of Applied Physics, 2011, 50(3S), 03CC03en_US
dc.identifier.issn0021-4922-
dc.identifier.urihttp://iopscience.iop.org/article/10.1143/JJAP.50.03CC03/meta-
dc.description.abstractThis paper quantitatively analyzes the signal integrity and device stability issues of gate driver circuits for active matrix displays integrated with hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs), and reveals that the clock-coupling noises and threshold voltage shift due to the DC gate bias in previous gate driver circuits can seriously affect the image quality. To resolve these problems, two types of decoder-based gate driver circuits have been proposed, that can completely avoid the floating output node to prevent the clock-coupling noises without applying the DC gate bias to all the TFTs used in the gate driver circuits. The performances and characteristics of the two proposed types of gate drivers will be discussed and compared, and the experimental results for the fabricated circuits will be presented. (c) 2011 The Japan Society of Applied Physicsen_US
dc.description.sponsorshipThis work was supported by the IT R&D program of MKE/KEIT (KI002182, TFT backplane technology for next generation display).en_US
dc.language.isoenen_US
dc.publisherIOP Publishing LTDen_US
dc.subjectINSTABILITIESen_US
dc.subjectCREATIONen_US
dc.subjectSHIFTen_US
dc.titleDecoder-Type Gate Driver Circuits Fabricated with Amorphous Silicon Thin-Film Transistors for Active Matrix Displaysen_US
dc.typeArticleen_US
dc.relation.volume50-
dc.identifier.doi10.1143/JJAP.50.03CC02-
dc.relation.page03CC03-1-03CC03-8-
dc.relation.journalJAPANESE JOURNAL OF APPLIED PHYSICS-
dc.contributor.googleauthorKim, TW-
dc.contributor.googleauthorPark, GT-
dc.contributor.googleauthorChoi, BD-
dc.contributor.googleauthorHong, M-
dc.contributor.googleauthorJang, JN-
dc.contributor.googleauthorSong, BC-
dc.contributor.googleauthorLee, DH-
dc.contributor.googleauthorBae, BS-
dc.relation.code2011217131-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDEPARTMENT OF ELECTRONIC ENGINEERING-
dc.identifier.pidbdchoi-
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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