Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박종완 | - |
dc.date.accessioned | 2018-02-03T01:24:37Z | - |
dc.date.available | 2018-02-03T01:24:37Z | - |
dc.date.issued | 2011-03 | - |
dc.identifier.citation | THIN SOLID FILMS, v. 519, NO 11, Page. 3636-3640 | en_US |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.uri | http://www.sciencedirect.com/science/article/pii/S0040609011004111?via%3Dihub | - |
dc.description.abstract | Cu has replaced Al as the main interconnection material in ultra-large integrated circuits, reducing resistance capacitance delay and yielding higher electro-migration reliability. As feature size decreases, however, it has become more difficult to produce reliable Cu wiring. We studied a Cu seed layer deposited using plasma enhanced atomic layer deposition (PEALD). The electrical properties of the PEALD Cu thin film with sub-10 nm thickness were determined by the continuities and morphologies of the films. At a deposition temperature of 150 degrees C. the resistivity of Cu thin films was 5.2 mu Omega-cm and the impurity content was below 5 atomic %. Based on these results, Cu seed layers were deposited on 32-nm Ta/SiO2 trench substrates, and electrochemical plating was performed under conventional conditions. A continuous seed layer was deposited using PEALD, resulting in a perfectly filling of the 32-nm sized trench. (C) 2011 Elsevier B.V. All rights reserved. | en_US |
dc.description.sponsorship | This work was supported by Hynix Semiconductor Inc. and the authors would also like to acknowledge the National Nanofab Center (NANO) for assistance with the STEM analysis. | en_US |
dc.language.iso | en | en_US |
dc.publisher | ELSEVIER SCIENCE SA | en_US |
dc.subject | Cu seed layer | en_US |
dc.subject | Atomic layer deposition | en_US |
dc.subject | Cu interconnect | en_US |
dc.subject | Surface energy | en_US |
dc.title | Effects of the substrate temperature on the Cu seed layer formed using atomic layer deposition | en_US |
dc.type | Article | en_US |
dc.relation.no | 11 | - |
dc.relation.volume | 519 | - |
dc.identifier.doi | 10.1016/j.tsf.2011.01.346 | - |
dc.relation.page | 3636-3640 | - |
dc.relation.journal | THIN SOLID FILMS | - |
dc.contributor.googleauthor | Moon, D. Y. | - |
dc.contributor.googleauthor | Han, D. S. | - |
dc.contributor.googleauthor | Shin, S. Y. | - |
dc.contributor.googleauthor | Park, J. W. | - |
dc.contributor.googleauthor | Kim, B. M. | - |
dc.contributor.googleauthor | Kim, J. H. | - |
dc.relation.code | 2011209470 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | jwpark | - |
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