Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박재근 | - |
dc.date.accessioned | 2018-02-02T08:13:20Z | - |
dc.date.available | 2018-02-02T08:13:20Z | - |
dc.date.issued | 2011-04 | - |
dc.identifier.citation | JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v. 158, NO 6, Page. 666-670 | en_US |
dc.identifier.issn | 0013-4651 | - |
dc.identifier.uri | http://jcr.incites.thomsonreuters.com/JCRJournalProfileAction.action?SID=A2-dFdAuK5FWpBxx7sr3Wx2Bz40T0gAfqAcvp4-18x2dZPRVmwez0Wzsoix2BefrHXeAx3Dx3DOdG6OoRZU7rx2BfbF8zjJvAwx3Dx3D-9vvmzcndpRgQCGPd1c2qPQx3Dx3D-wx2BJQh9GKVmtdJw3700KssQx3Dx3D&issn=0013-4651&SrcApp=IC2LS&Init=Yes&tab=RANK | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/35090 | - |
dc.description.abstract | We investigated the chemical mechanical planarization (CMP) mechanism of nitrogen-doped polycrystalline Ge2Sb2Te5 (pc-GST) using nitric acid slurry without or with 1.0 wt % hydrogen peroxide (H2O2). Without H2O2, the pc-GST film surface undergoes selective corrosion of Ge and Sb, resulting in pitting corrosion. Otherwise, with H2O2, the pc-GST film surface produces a Ge, Sb, Te oxide layer, thereby introducing a cyclic polishing process such as chemical oxidation, chemical and mechanical polishing, and sequential chemical oxidation. As a result, the polishing rate increased up to similar to 1000 angstrom/min and the surface roughness decreased to 0.858 nm. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3571529] All rights reserved. | en_US |
dc.description.sponsorship | This investigation was financially supported by Collaborative Industry Project between Hanyang University and Hynix Semiconductor Inc., Acceleration Research Program of the Ministry of Education, Science and Technology, and the Brain Korea 21 Project in 2010. We also thank Sumco Corp. for helping us with the experiments. | en_US |
dc.language.iso | en | en_US |
dc.publisher | ELECTROCHEMICAL SOC INC | en_US |
dc.subject | THIN-FILMS | en_US |
dc.subject | MEMORY | en_US |
dc.title | Chemical Mechanical Planarization Mechanism for Nitrogen-Doped Polycrystalline Ge2Sb2Te5 Film Using Nitric Acidic Slurry Added with Hydrogen Peroxide | en_US |
dc.type | Article | en_US |
dc.relation.no | 6 | - |
dc.relation.volume | 158 | - |
dc.identifier.doi | 10.1149/1.3571529 | - |
dc.relation.page | 666-670 | - |
dc.relation.journal | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | - |
dc.contributor.googleauthor | Cui, H | - |
dc.contributor.googleauthor | Cho, JY | - |
dc.contributor.googleauthor | Park, JH | - |
dc.contributor.googleauthor | Park, HS | - |
dc.contributor.googleauthor | Park, JG | - |
dc.relation.code | 2011205950 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | parkjgl | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.