Fabrication and characterization of a CuO/ITO heterojunction with a graphene transparent electrode
- Title
- Fabrication and characterization of a CuO/ITO heterojunction with a graphene transparent electrode
- Author
- 박진섭
- Keywords
- CuO; heterojunction; graphene electrode; I-V characteristics
- Issue Date
- 2016-03
- Publisher
- IOP PUBLISHING LTD
- Citation
- SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v. 31, NO 5, Article number 055004, Page. 1-7
- Abstract
- In this paper, we investigate the electrical properties of a CuO-ITO heterojunction diode with the use of a graphene transparent electrode by current-voltage (I-V) characteristics. CuO thin films were deposited onto an ITO substrate by a simple sol-gel spin coating method and annealed at 500 degrees C. The x-ray diffraction pattern of the CuO thin films revealed the polycrystalline nature of CuO and exhibited a monoclinic crystal structure. FESEM images showed a uniform and densely packed particulate morphology. The optical band gap of CuO thin films estimated using UV-vis absorption spectra was found to be 2.50 eV. The I-V characteristics of the fabricated CuO-ITO heterojunction showed a well-defined rectifying behavior with improved electrical properties after the insertion of graphene. The electronic parameters of the heterostructure such as barrier height, ideality factor and series resistance were determined from the I-V measurements, and the possible current transport mechanism was discussed.
- URI
- http://iopscience.iop.org/article/10.1088/0268-1242/31/5/055004/metahttp://hdl.handle.net/20.500.11754/34518
- ISSN
- 0268-1242; 1361-6641
- DOI
- 10.1088/0268-1242/31/5/055004
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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