Effect of Mg insertion on stress-induced resistance drift in MgO-based magnetic tunnel junctions
- Title
- Effect of Mg insertion on stress-induced resistance drift in MgO-based magnetic tunnel junctions
- Author
- 송윤흡
- Keywords
- MEMORY
- Issue Date
- 2016-03
- Publisher
- INST ENGINEERING TECHNOLOGY-IET
- Citation
- ELECTRONICS LETTERS, v. 52, NO 7, Page. 531-532
- Abstract
- The stress-induced resistance drift in MgO-based magnetic tunnel junctions (MTJs) with Mg insertion layer above and below a MgO tunnel barrier is investigated. Mg insertion suppresses the resistance drift. Resistance drift characteristics are improved when electrons tunnel into the Mg-inserted barrier-electrode interface, indicating that Mg insertion significantly suppresses trap site formation at the anode-side barrier-electrode interface. However, transmission electron microscopy images confirm that there is little difference in interface crystallinity between the Mg-inserted and non-inserted interfaces. Therefore, it is shown that a slight modification of the barrier-electrode interface states has a significant impact on resistance drift characteristics, and Mg insertion on both interface sides appears to be an effective way to improve MTJ device reliability in practical applications.
- URI
- http://digital-library.theiet.org/content/journals/10.1049/el.2015.4299http://hdl.handle.net/20.500.11754/34282
- ISSN
- 0013-5194; 1350-911X
- DOI
- 10.1049/el.2015.4299
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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