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Atomic layer deposition of highly conductive indium oxide using a liquid precursor and water oxidant

Title
Atomic layer deposition of highly conductive indium oxide using a liquid precursor and water oxidant
Author
박진성
Keywords
Atomic layer deposition; Transparent conducting oxide; Thin films; Indium oxide
Issue Date
2015-11
Publisher
ELSEVIER SCI LTD
Citation
CERAMICS INTERNATIONAL, v. 41, NO 9, Page. 10782-10787
Abstract
Atomic layer deposition (ALD) of In2O3 films was investigated using a novel liquid precursor, [3-(dimethylamino)propyl] dimethyl indium (DADI). Typical ALD growth was observed at a substrate temperature of 275 degrees C, with relatively high growth rates of 0.6 angstrom/cycle. The In2O3 layer exhibits low resistivity (9.2 x 10(-5) Omega cm) with relatively high optical transparency (˃ 80% between 420 and 700 nm). The carrier concentration is approximately one or two orders of magnitude higher than those reported in the literature. The origin of such electrical properties is investigated with respect to the microstructure and chemical properties of the In2O3 film. (C) 2015 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
URI
http://www.sciencedirect.com/science/article/pii/S027288421500944X?via%3Dihubhttp://hdl.handle.net/20.500.11754/29007
ISSN
0272-8842; 1873-3956
DOI
10.1016/j.ceramint.2015.05.015
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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