Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박재근 | - |
dc.date.accessioned | 2017-09-08T00:24:54Z | - |
dc.date.available | 2017-09-08T00:24:54Z | - |
dc.date.issued | 2015-11 | - |
dc.identifier.citation | NANOTECHNOLOGY, v. 26, NO 47, Page. 475705-475705 | en_US |
dc.identifier.issn | 0957-4484 | - |
dc.identifier.issn | 1361-6528 | - |
dc.identifier.uri | http://iopscience.iop.org/article/10.1088/0957-4484/26/47/475705/meta;jsessionid=1EEEF1EF341C8BFB0A2E67E32DD1C5C0.c4.iopscience.cld.iop.org | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/28964 | - |
dc.description.abstract | We design a Co2Fe6B2/MgO-based p-MTJ spin-valve without a [Co/Pt](n) lower synthetic-antiferromagnetic (SyAF) layer to greatly reduce the 12-inch wafer fabrication cost of the p-MTJ spin-valve. This spin-valve achieve a tunneling magnetoresistance (TMR) of 158% and an exchange field (H-ex) of 1.4 kOe at an ex situ annealing temperature of ˃350 degrees C, which ensures writing error immunity. In particular, the TMR ratio strongly depends on the body-center-cubic capping-layer nanoscale thickness (t(bcc)), i.e., the TMR ratio peaks at t(bcc) = 0.6 nm. | en_US |
dc.description.sponsorship | This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (No.2014R1-A2A1A01006474) and the Brain Korea 21 PLUS Program in 2014. | en_US |
dc.language.iso | en | en_US |
dc.publisher | IOP PUBLISHING LTD | en_US |
dc.subject | magnetic-tunnel-junction | en_US |
dc.subject | perpendicular-spin-transfer-torque-magnetic-random-access-memory | en_US |
dc.subject | synthetic-antiferromagnetic | en_US |
dc.subject | tunneling magneto-resistance ratio | en_US |
dc.subject | exchange field | en_US |
dc.title | Co2Fe6B2/MgO-based perpendicular spin-transfer-torque magnetic-tunnel-junction spin-valve without [Co/Pt](n) lower synthetic-antiferromagnetic layer | en_US |
dc.type | Article | en_US |
dc.relation.no | 47 | - |
dc.relation.volume | 26 | - |
dc.identifier.doi | 10.1088/0957-4484/26/47/475705 | - |
dc.relation.page | 475705-475705 | - |
dc.relation.journal | NANOTECHNOLOGY | - |
dc.contributor.googleauthor | Lee, Seung-Eun | - |
dc.contributor.googleauthor | Shim, Tae-Hun | - |
dc.contributor.googleauthor | Park, Jea-Gun | - |
dc.relation.code | 2015001023 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | parkjgl | - |
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