Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박종완 | - |
dc.date.accessioned | 2017-08-04T04:58:50Z | - |
dc.date.available | 2017-08-04T04:58:50Z | - |
dc.date.issued | 2015-10 | - |
dc.identifier.citation | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v. 15, Page. 7606-7610 | en_US |
dc.identifier.issn | 1533-4880 | - |
dc.identifier.issn | 1533-4899 | - |
dc.identifier.uri | http://www.ingentaconnect.com/content/asp/jnn/2015/00000015/00000010/art00038 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/28295 | - |
dc.description.abstract | We investigated the performance of tin oxide thin film transistors (TFTs) using DC magnetron sputtering. A remarkable improvement in the transfer characteristics was obtained for the Hf-doped tin oxide (HTO) TFT. We also developed amorphous hafnium-zinc-tin oxide (HZTO) thin film transistors and investigated the effects of hafnium doping on the electrical characteristics of the HTO TFTs. Doping with hafnium resulted in a reduced defect density in the tin oxide channel layer related to oxygen vacancies, which may result from increased field effect mobility. Zinc atoms have relatively higher oxidation potential compared to tin atoms, so more oxygen molecules can be absorbed and more electrons are trapped in the HZTO films. The HZTO TFTs exhibited good electrical characteristics with a field effect mobility of 10.98 cm(2)/Vs, and a high I-ON/I-OFF ratio over 10(8). | en_US |
dc.description.sponsorship | This work was supported by the Basic Science Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2014M2B2A4029604). | en_US |
dc.language.iso | en | en_US |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | en_US |
dc.subject | Thin Film Transistors (TFTs) | en_US |
dc.subject | Hafnium-Tin Oxide (HTO) | en_US |
dc.subject | Hafnium-Zinc-Tin Oxide (HZTO) | en_US |
dc.subject | Positive Bias Temperature Stability (PBTS) | en_US |
dc.title | Improvement in the Positive Bias Temperature Stability of SnOx-Based Thin Film Transistors by Hf and Zn Doping | en_US |
dc.type | Article | en_US |
dc.relation.volume | 15 | - |
dc.identifier.doi | 10.1166/jnn.2015.11155 | - |
dc.relation.page | 7606-7610 | - |
dc.relation.journal | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.contributor.googleauthor | Han, Dongsuk | - |
dc.contributor.googleauthor | Park, Jaehyung | - |
dc.contributor.googleauthor | Kang, Minsoo | - |
dc.contributor.googleauthor | Jeon, Hyeongtag | - |
dc.contributor.googleauthor | Park, Jongwan | - |
dc.relation.code | 2015003357 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | jwpark | - |
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