Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박진성 | - |
dc.date.accessioned | 2017-06-02T00:22:00Z | - |
dc.date.available | 2017-06-02T00:22:00Z | - |
dc.date.issued | 2015-09 | - |
dc.identifier.citation | IEEE ELECTRON DEVICE LETTERS, v. 36, NO 9, Page. 917-919 | en_US |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.issn | 1558-0563 | - |
dc.identifier.uri | http://ieeexplore.ieee.org/abstract/document/7167653/ | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/27576 | - |
dc.description.abstract | Flexible top-gate amorphous InGaZnO thin-film transistors are fabricated on polyimide substrates. The effect of the alumina buffer layers on the device performance and stability is demonstrated using two types of atomic layer deposition reactant sources: 1) ozone and 2) water. Alumina buffers formed by water reactants have better barrier properties against the ambient than those formed by ozone. Furthermore, less charge trapping at sub-gap density-of-states occurs with higher film density of the buffer layer. Stability characteristics under negative bias temperature stress are enhanced by optimization of the buffer layer formation on flexible substrates. | en_US |
dc.description.sponsorship | This work was supported in part by the Industry Technology Research and Development Program within the Ministry of Trade, Industry and Energy through the Korea Evaluation Institute of Industrial Technology under Grant 10051080, in part by LG Display Company, Ltd., and in part by the Ministry of Science, ICT and Future Planning through the Institute for Information and Communications Technology Promotion under Grant 10041416. The review of this letter was arranged by Editor S. Hall. (Saeroonter Oh and Jin-Seong Park contributed equally to this work.) (Corresponding author: Saeroonter Oh and Jin-Seong Park.) | en_US |
dc.language.iso | en | en_US |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | en_US |
dc.subject | Amorphous InGaZnO (a-IGZO) | en_US |
dc.subject | thin-film transistor (TFT) | en_US |
dc.subject | alumina buffer | en_US |
dc.subject | atomic layer deposition (ALD) | en_US |
dc.title | Effect of Alumina Buffers on the Stability of Top-Gate Amorphous InGaZnO Thin-Film Transistors on Flexible Substrates | en_US |
dc.type | Article | en_US |
dc.relation.no | 9 | - |
dc.relation.volume | 36 | - |
dc.identifier.doi | 10.1109/LED.2015.2461003 | - |
dc.relation.page | 917-919 | - |
dc.relation.journal | IEEE ELECTRON DEVICE LETTERS | - |
dc.contributor.googleauthor | Ok, Kyung-Chul | - |
dc.contributor.googleauthor | Oh, Saeroonter | - |
dc.contributor.googleauthor | Jeong, Hyun-Jun | - |
dc.contributor.googleauthor | Bae, Jong Uk | - |
dc.contributor.googleauthor | Park, Jin-Seong | - |
dc.relation.code | 2015000488 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | jsparklime | - |
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