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dc.contributor.author김태환-
dc.date.accessioned2017-05-02T01:37:24Z-
dc.date.available2017-05-02T01:37:24Z-
dc.date.issued2015-08-
dc.identifier.citationJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v. 15, NO 8, Page. 6112-6115en_US
dc.identifier.issn1533-4880-
dc.identifier.issn1533-4899-
dc.identifier.urihttp://www.ingentaconnect.com/content/asp/jnn/2015/00000015/00000008/art00101-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/27112-
dc.description.abstractOrganic bistable devices (OBDs) based on CdSe/CdS/ZnS core-shell-shell nanoparticles embedded in a polystyrene (PS) layer with an inserted WO3 layer were fabricated by using the spin coating method and the thermal evaporation. The current density voltage (J-V) curves for the Al/CdSe/CdS/ZnS core-shell-shell nanoparticles embedded in PS layer/WO3/ITO devices with different thicknesses of WO3 layers exhibited electrical bistabilities. Simulated J-V curves for the OBDs containing CdSe/CdS/ZnS core shell shell nanoparticles were in reasonable agreement with the experimental results. The simulated J-V characteristics for the OBDs at various trap densities utilizing the double Gaussian distribution showed that the current level decreased with increasing shallow trap density and that the transition voltage increased with increasing deep trap density.en_US
dc.description.sponsorshipThis research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2013-016467).en_US
dc.language.isoenen_US
dc.publisherAMER SCIENTIFIC PUBLISHERSen_US
dc.subjectOrganic Bistable Deviceen_US
dc.subjectElectrical Propertyen_US
dc.subjectBistable Characteristicsen_US
dc.subjectCdSe/CdS/ZnS Core-Shell-Shell Nanoparticleen_US
dc.subjectWO3 Layeren_US
dc.titleElectrical Property Variations in Organic Bistable Devices Utilizing CdSe/CdS/ZnS Core-Shell-Shell Nanoparticle Layer Embedded in a Polystyrene Layer Due to an Inserted WO3 Layeren_US
dc.typeArticleen_US
dc.relation.no8-
dc.relation.volume15-
dc.identifier.doi10.1166/jnn.2015.10431-
dc.relation.page6112-6115-
dc.relation.journalJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY-
dc.contributor.googleauthorYou, Chan Ho-
dc.contributor.googleauthorKim, Tae Whan-
dc.relation.code2015003357-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDEPARTMENT OF ELECTRONIC ENGINEERING-
dc.identifier.pidtwk-
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COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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