Highly Transparent, Visible-Light Photodetector Based on Oxide Semiconductors and Quantum Dots

Title
Highly Transparent, Visible-Light Photodetector Based on Oxide Semiconductors and Quantum Dots
Authors
박진성
Keywords
IGZO; cadmium selenide; quantum dots; photodetector; visible light; transparent photodetector
Issue Date
2015-08
Publisher
AMER CHEMICAL SOC
Citation
ACS APPLIED MATERIALS & INTERFACES, v. 7, NO 35, Page. 19666-19671
Abstract
Highly transparent phototransistors that can detect visible light have been fabricated by combining indium gallium zinc oxide (IGZO) and quantum dots (Qns). A wide-band-gap IGZO film was used as a transparent semiconducting channel, while small-band-gap QDs were adopted to absorb and convert visible light to an electrical signal. Typical IGZO thinfilm transistors (TFTs) did not show a photocurrent with illumination of visible light. However, IGZO TFTs decorated with QDs showed enhanced photocurrent upon exposure to visible light. The device showed a responsivity of 1.35 x 10(4) A/W and an external quantum efficiency of 2.59 x 104 under illumination by a 635 nm laser. The origin of the increased photocurrent in the visible light was the small band gap of the QDs combined with the transparent IGZO films. Therefore, transparent phototransistors based on IGZO and QDs were fabricated and characterized in detail. The result is relevant for the development of highly transparent photo detectors that can detect visible light.
URI
http://pubs.acs.org/doi/abs/10.1021/acsami.5b04683http://hdl.handle.net/20.500.11754/26849
ISSN
1944-8244
DOI
http://dx.doi.org/10.1021/acsami.5b04683
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ETC
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE