N타입 결정질 실리콘 웨이퍼 두께 및 알루미늄 페이스트 도포량 변화에 따른 Bowing 및 Al doped p+ layer 형성 분석
- Title
- N타입 결정질 실리콘 웨이퍼 두께 및 알루미늄 페이스트 도포량 변화에 따른 Bowing 및 Al doped p+ layer 형성 분석
- Other Titles
- Analysis on bowing and formation of Al doped P+ layer by changes of thickness of N-type wafer and amount of Al paste
- Author
- 김영도
- Keywords
- solar cell; n-type; thin wafer; bowing; Al doped p+ layer
- Issue Date
- 2015-07
- Publisher
- Materials Research Society of Korea
- Citation
- 한국재료학회지, v. 25, NO 1, Page. 16-20
- Abstract
- In this study, in order to improve the efficiency of n-type monocrystalline solar cells with an Alu-cell structure, we investigate the effect of the amount of Al paste in thin n-type monocrystalline wafers with thicknesses of 120 μm, 130 μm, 140 μm. Formation of the Al doped p+ layer and wafer bowing occurred from the formation process of the Al back electrode was analyzed. Changing the amount of Al paste increased the thickness of the Al doped p+ layer, and sheet resistivity decreased; however, wafer bowing increased due to the thermal expansion coefficient between the Al paste and the c-Si wafer. With the application of 5.34 mg/cm2 of Al paste, wafer bowing in a thickness of 140 μm reached a maximum of 2.9 mm and wafer bowing in a thickness of 120 μm reached a maximum of 4 mm. The study’s results suggest that when considering uniformity and thickness of an Al doped p+ layer, sheet resistivity, and wafer bowing, the appropriate amount of Al paste for formation of the Al back electrode is 4.72 mg/cm2 in a wafer with a thickness of 120 μm.
- URI
- http://journal.mrs-k.or.kr/journal/article.php?code=21808http://hdl.handle.net/20.500.11754/26189
- ISSN
- 1225-0562; 2287-7258
- DOI
- 10.3740/MRSK.2015.25.1.16
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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