Structural and optical properties of MoS2 layers grown by successive two-step chemical vapor deposition method

Title
Structural and optical properties of MoS2 layers grown by successive two-step chemical vapor deposition method
Authors
김은규
Keywords
Molybdenum disulfide; Chemical vapor deposition; Field effect transistor
Issue Date
2015-07
Publisher
ELSEVIER SCIENCE SA
Citation
THIN SOLID FILMS, v. 587, Page. 47-51
Abstract
We have studied a successive two-step chemical vapor deposition (CVD) method to prepare large-scale MoS2 thin films using a horizontal hot wall furnace. The CVD growth was followed by evaporation of the MoO3 precursor on similar to 2.5 x 2.5 cm(2) SiO2/Si substrates in the first step and a temperature ramp for sulfurization as a second step. Synthesized films were systematically analyzed by various structural and optical measurements. Crystallinity of the synthesized MoS2 tri-layer films exhibited a typical 2H-MoS2 structure and uniformly covered the whole substrate. MoS2 field effect transistors were fabricated by using the obtained CVD-MoS2, and these showed n-type behavior with an on/off ratio of about 10(3). (C) 2015 Elsevier B.V. All rights reserved.
URI
http://www.sciencedirect.com/science/article/pii/S004060901500070Xhttp://hdl.handle.net/20.500.11754/25979
ISSN
0040-6090
DOI
http://dx.doi.org/10.1016/j.tsf.2015.01.036
Appears in Collections:
COLLEGE OF NATURAL SCIENCES[S](자연과학대학) > PHYSICS(물리학과) > Articles
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