Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 정재경 | - |
dc.date.accessioned | 2017-02-21T06:37:21Z | - |
dc.date.available | 2017-02-21T06:37:21Z | - |
dc.date.issued | 2015-06 | - |
dc.identifier.citation | IEEE ELECTRON DEVICE LETTERS, v. 36, NO 8, Page. 802-804 | en_US |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.issn | 1558-0563 | - |
dc.identifier.uri | http://ieeexplore.ieee.org/abstract/document/7123601/ | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/25585 | - |
dc.description.abstract | This letter reports the effects of Ca doping into Cu films, which was used as a source/drain (S/D) electrode for high performance amorphous In-Ga-Zn-O (IGZO) thinfilm transistors (TFTs) with a low resistive-capacitive delay time. The IGZO TFTs with Ca-doped Cu S/D exhibited three times higher saturation mobility (16 cm(2)/Vs) and substantially lower subthreshold gate swing of 0.39 V/decade than the control devices with pure Cu S/D. The SIMS profile and cross-sectional transmission electron microscopy showed that Ca effectively prevented the Cu atoms from diffusing into channel IGZO region presumably as a result of Ca-O bond formation, which is responsible for their superior device performances. | en_US |
dc.description.sponsorship | This work was supported by the Industrial Strategic Technology Development Program through the Ministry of Knowledge Economy/Ministry of Energy, Industry and Trade under Grant 10048560. | en_US |
dc.language.iso | en | en_US |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | en_US |
dc.subject | Ca-doped Cu | en_US |
dc.subject | low resistivity | en_US |
dc.subject | a-IGZO | en_US |
dc.subject | diffusion barrier | en_US |
dc.subject | high performance | en_US |
dc.subject | thin-film transistors | en_US |
dc.title | Improvement in Device Performance of a-InGaZnO Transistors by Introduction of Ca-Doped Cu Source/Drain Electrode | en_US |
dc.type | Article | en_US |
dc.relation.no | 8 | - |
dc.relation.volume | 36 | - |
dc.identifier.doi | 10.1109/LED.2015.2445348 | - |
dc.relation.page | 802-804 | - |
dc.relation.journal | IEEE ELECTRON DEVICE LETTERS | - |
dc.contributor.googleauthor | Lee, Sang Ho | - |
dc.contributor.googleauthor | Oh, Dong Ju | - |
dc.contributor.googleauthor | Hwang, Ah Young | - |
dc.contributor.googleauthor | Han, Dong Suk | - |
dc.contributor.googleauthor | Kim, Shin | - |
dc.contributor.googleauthor | Jeong, Jae Kyeong | - |
dc.contributor.googleauthor | Park, Jong Wan | - |
dc.relation.code | 2015000488 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | jkjeong1 | - |
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